General Description

This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V – 20V).

Features

• –2.3 A, –60 V RDS(ON)= 250 mΩ@ VGS= –10 V

RDS(ON)= 500 mΩ@ VGS= –4.5 V

• Low gate charge (9nC typical)

• Fast switching speed

• High performance trench technology for extremely low RDS(ON)

• High power and current handling capability