Dual N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. Thes

Dual N-Channel Enhancement Mode Field Effect Transistor

Dual N-Channel 30-V (D-S) MOSFET

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Dual N-Channel 30-V (D-S) MOSFET

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RS232/423 Low Cap, #24-15c, FPE, O/A FoilBraid, PVC Jkt, CM

Product Description Computer EIA RS-232/423 Cable, 24 AWG stranded (7x32) tinned copper conductors, Datalene® insulation, overall Beldfoil® (100 coverage) + tinned copper braid shield (65 coverage), drain wire, PVC jacket.

Dual N-Channel 30-V (D-S) MOSFET

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Industrial temperature calibration selection guide

文件：1.9644 Mbytes Page：16 Pages

Dual N-Channel 30-V (D-S) MOSFET

文件：1.02515 Mbytes Page：9 Pages

Dual N-Channel 30-V (D-S) MOSFET

文件：1.025109 Mbytes Page：9 Pages