30V P-Channel PowerTrench MOSFET

General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V – 20V). Features • –5.3 A, –30 V RDS(ON) = 60 mΩ @ VGS

Single P-Channel Enhancement Mode Field Effect Transistor

General Description These P-Channel enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and with

30V P-Channel PowerTrench MOSFET

文件：139.54 Kbytes Page：5 Pages

30V P-Channel PowerTrench MOSFET

Single P-Channel Enhancement Mode Field Effect Transistor

General Description These P-Channel enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and with

30V P-Channel PowerTrench MOSFET

文件：139.54 Kbytes Page：5 Pages

Electronic, 7 C #22 Str TC, PVC Ins, PVC Jkt, CMG

Product Description Electronic, 7 Conductor 22AWG (7x30) Tinned Copper, PVC Insulation, PVC Outer Jacket, CMG

SpaceMaker™, 7 C #22 Str TC, PO Ins, PVC Jkt, AWM 2937

Product Description SpaceMaker™, 7 Conductor 22AWG (19x34) Tinned Copper, PO Insulation, PVC Outer Jacket, AWM 2937

MACHINE SCREW PAN PHILLIPS 10-32

文件：130.87 Kbytes Page：1 Pages

LTE Band 7 MIPI ET PA 2.0 mm 횞 2.5 mm Power Amplifier Module

文件：163.82 Kbytes Page：3 Pages

Power Amplifier Module

文件：168.23 Kbytes Page：3 Pages