30V P-Channel PowerTrench MOSFET

General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V – 20V). Features • –5.3 A, –30 V RDS(ON) = 60 mΩ @ VGS

Single P-Channel Enhancement Mode Field Effect Transistor

General Description These P-Channel enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and with

30V P-Channel PowerTrench MOSFET

文件：139.54 Kbytes Page：5 Pages

30V P-Channel PowerTrench MOSFET

Single P-Channel Enhancement Mode Field Effect Transistor

General Description These P-Channel enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and with

30V P-Channel PowerTrench MOSFET

文件：139.54 Kbytes Page：5 Pages

12-Bit, 170 MSPS 3.3V A/D Converter

GENERAL DESCRIPTION The AD9430 is a 12-bit, monolithic, sampling analog-to-digital converter (ADC) optimized for high performance, low power, and ease of use. The product operates up to a 210 MSPS conversion rate and is optimized for outstanding dynamic performance in wideband carrier and broadba

12-Bit, 170 MSPS 3.3V A/D Converter

GENERAL DESCRIPTION The AD9430 is a 12-bit, monolithic, sampling analog-to-digital converter (ADC) optimized for high performance, low power, and ease of use. The product operates up to a 210 MSPS conversion rate and is optimized for outstanding dynamic performance in wideband carrier and broadba

Single P-Channel Enhancement Mode MOSFET

General Description This P-Channel Enhancement Mode MOSFET is produced using Fairchild Semiconductor’s advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. This device is well suited for low voltage and battery powered