General Description

This P-Channel Enhancement Mode MOSFET is produced using Fairchild Semiconductor’s advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

This device is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Features

• -5.8 A, -20 V. RDS(on) = 0.050 Ω @ VGS = -10 V

RDS(on) = 0.090 Ω @ VGS = -4.5 V.

• Low gate charge.

• Fast switching speed.

• High power and current handling capability.

Applications

• Battery switch

• Load switch

• Motor controls