N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suit

N-Channel, Logic Level, PowerTrench® MOSFET

General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are particularly suited for low v

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suit

N-Channel Enhancement Mode MOSFET

Features ® Vos =30Vio = 2A Rosin

N 沟道，逻辑电平，PowerTrench® MOSFET，30V，1.4A，160mΩ

N 沟道逻辑电平增强型场效应晶体管，30V，1.1A，250mΩ

MINIATURE, IN-LINE, COAXIAL, K CONNECTORS

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ROTARY JOINT MINIATURE, IN-LINE, COAXIAL, K CONNECTORS

文件：145.35 Kbytes Page：1 Pages

Round Head Centre Punches, 100mm 4in long.

文件：20.74 Kbytes Page：1 Pages

Round Head Centre Punches, 100mm 4in long.

文件：20.74 Kbytes Page：1 Pages

Round Head Centre Punches, 100mm 4in long.

文件：20.74 Kbytes Page：1 Pages