isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=8.5A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.85Ω(Max)@VGS = 10 V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

功率 MOSFET，500V，7.5A，0.850Ω，单 N 沟道，TO-220FP

N-Channel Power MOSFET 500 V, 0.69 

文件：146.17 Kbytes Page：6 Pages

N-Channel Power MOSFET 500 V, 0.85

文件：123.55 Kbytes Page：6 Pages

N-Channel Power MOSFET 500 V, 0.69 

文件：146.17 Kbytes Page：6 Pages

N-Channel Power MOSFET 500 V, 0.85

文件：123.55 Kbytes Page：6 Pages

POWER FIELD EFFECT TRANSISTOR

GENERAL DESCRIPTION This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy effic

N-CHANNEL SILICON POWER MOSFET

文件：451.57 Kbytes Page：5 Pages

POWER FIELD EFFECT TRANSISTOR

文件：226.35 Kbytes Page：7 Pages

POWER FIELD EFFECT TRANSISTOR

文件：224.7 Kbytes Page：7 Pages

N-CHANNEL SILICON POWER MOSFET

文件：451.57 Kbytes Page：5 Pages