Silicon Carbide (SiC) Schottky Diode – EliteSiC, 25 A, 1700 V, Die

Customer Specification

Construction Alpha Wire | 711 Lidgerwood Avenue, Elizabeth, NJ 07207 Tel: 1-800-52 ALPHA (25742), Web: www.alphawire.com Diameters (In) 1) Component 1 10 X 1 COND a) Conductor 18 (16/30) AWG Tinned Copper 0.047 b) Insulation 0.016 Wall, Nom. PVC 0.079 (1) Color Code Alpha Wire Color Code

0.5-10 GHz Low Noise Gallium Arsenide FET

Description The ATF-25170 is a high performance gallium arsenide Schottky barrier-gate field effect transistor housed in a hermetic, high reliability package. Its noise figure makes this device appropriate for use in low noise amplifiers operating in the 0.5-10 GHz frequency range. This GaAs FET

BQ25170: 800-mA Linear Battery Charger for 1-Cell Li-Ion, and LiFePO4

1 Features • Input voltage up-to 30-V tolerant • Automatic Sleep Mode for low power consumption – 350-nA battery leakage current – 85-μA input leakage current when charge disabled • Supports 1-cell Li-Ion, Li-Poly, and LiFePO4 • External resistor programmable operation – VSET to set batter

BQ25170: 800-mA Linear Battery Charger for 1-Cell Li-Ion, and LiFePO4

文件：556.04 Kbytes Page：10 Pages

BQ25170: 800-mA Linear Battery Charger for 1-Cell Li-Ion, and LiFePO4

文件：556.04 Kbytes Page：10 Pages