N-Channel Depletion-Mode MOSFET Transistors

Features ● High Breakdown Voltage: 220 V ● Normally “On” Low rDS Switch: 9 Ω ● Low Input and Output Leakage ● Low-Power Drive Requirement ● Low Input Capacitance Benefits ● Full-Voltage Operation ● Low Offset Voltage ● Low Error Voltage ● Easily Driven Without Buffe

N沟道耗尽型MOSFET晶体管

N-Channel Depletion-Mode MOSFET Transistors

Features ● High Breakdown Voltage: 220 V ● Normally “On” Low rDS Switch: 9 Ω ● Low Input and Output Leakage ● Low-Power Drive Requirement ● Low Input Capacitance Benefits ● Full-Voltage Operation ● Low Offset Voltage ● Low Error Voltage ● Easily Driven Without Buffe

ND20201.405126 REV.A

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ND20201.405128 REV.A

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N沟道耗尽型MOSFET晶体管

Directional Couplers Mini, Octave Bandwidth

Description These miniature couplers are designed to provide sampling of the RF Power propagating in one direction on a transmission line. Features • Smallest and Lightest Couplers Available • 0.5 through 18 GHz, including Wideband Units • High Directivity - Low VSWR • Meets MIL-E-5400 Envir

Directional Couplers Mini, Octave Brandwidth

HIGH VOLTAGE CAPACITORS MONOLITHIC CERAMIC TYPE

FIXED SIP DELAY LINE TR 1ns

FUNCTIONAL DESCRIPTION The 2020- and 2021-series devices are fixed, single-input, single-output, passive delay lines. The signal input (IN) is reproduced at the output (OUT), shifted by a time (TD) given by the device dash number. The characteristic impedance of the lines is nominally 50 ohms. Th

Aluminum Electrolytic Capacitors

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