Switching Diode

Features • Ultra high speed switching application • Low forward voltage : VF=0.9V(Typ.) • Fast reverse recovery time : trr=1.6 ㎱(Typ.) • Small total capacitance : CT=2.2 ㎊(Typ.)

Small Signal Fast Switching Diode

General Description General-purpose switching diodes, fabricated in planar technology, and packaged in small SOD-923 surface mounted device (SMD) packages. Features and Benefits • Silicon epitaxial planar diode • High switching speed: trr≤4ns • Low forward drop voltage and low leakage current

Switching Diodes

包装：散装 描述：TERM BLOCK PLUG 18POS STR 3.5MM 连接器，互连器件 针座、插头和插座

VHF variable capacitance diode

DESCRIPTION The BB181 is a variable capacitance diode, fabricated in planar technology and encapsulated in the SOD523 (SC-79) ultra small plastic SMD package. FEATURES • Excellent linearity • Ultra small plastic SMD package • C28: 1 pF; ratio: 14. APPLICATIONS • Electronic tuning in satelli

Silicon NPN Planar RF Transistor

Features • Low noise figure • High power gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC    and WEEE 2002/96/EC Applications    For low noise and high gain broadband amplifiers at    collector currents from 0.5 mA to 12 mA.

POWER TRANSISTORS(3.0A,40-80V,12.5W)

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60-80 VOLTS 12.5 WATTS

3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60–80 VOLTS 12.5 WATTS . . . designed for low power audio amplifier and low current, high speed switching applications. • Collector–Emitter Sustaining Voltage — VCEO(sus) = 60 Vdc — MJE171, MJE181 VCEO(sus) = 80 Vdc — MJE172, MJE182

POWER TRANSISTORS COMPLEMENTARY SILICON

Complementary Plastic Silicon Power Transistors The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. Features • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc − MJE170, MJE180 = 60 Vdc − MJE171,