Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection

Features • Diode Clamp Between Gate and Source • ESD Protection − Human Body Model 5000 V • Active Over−Voltage Gate to Drain Clamp • Scalable to Lower or Higher RDS(on) • Internal Series Gate Resistance • These are Pb−Free Devices Benefits • High Energy Capability for Inductive Loads • L

箝位 MOSFET，N 沟道，带 ESD 保护

NCV8440 是一款带保护 N 沟道功率 MOSFET。保护功能包括用于过电压保护的集成式漏极-门极箝位。 • Diode Clamp Between Gate and Source\n• Active Overvoltage Gate to Drain Clamp\n• Internal Series Gate Resistance;

Protected Power MOSFET 2.6 A, 52 V, N?묬hannel, Logic Level, Clamped MOSFET w/ ESD Protection

文件：154.27 Kbytes Page：8 Pages

Protected Power MOSFET

文件：89.91 Kbytes Page：9 Pages

Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection

Features • Diode Clamp Between Gate and Source • ESD Protection − Human Body Model 5000 V • Active Over−Voltage Gate to Drain Clamp • Scalable to Lower or Higher RDS(on) • Internal Series Gate Resistance • These are Pb−Free Devices Benefits • High Energy Capability for Inductive Loads • L

箝位 MOSFET，N 沟道，带 ESD 保护

NCV8440 is a protected N-Channel power MOSFET device. The protection feature includes integrated Drain-to-Gate clamping for overvoltage protection. • Diode Clamp Between Gate and Source\n• High Energy Capability for Inductive Loads\n• ESD ProtectionHBM 5000 V\n• Low Switching Noise Generation\n• Active Overvoltage Gate to Drain Clamp\n• Scalable to Lower or Higher RDS(on)\n• Internal Series Gate Resistance;

Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection

Features • Diode Clamp Between Gate and Source • ESD Protection − Human Body Model 5000 V • Active Over−Voltage Gate to Drain Clamp • Scalable to Lower or Higher RDS(on) • Internal Series Gate Resistance • These are Pb−Free Devices Benefits • High Energy Capability for Inductive Loads • L

Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection

Features • Diode Clamp Between Gate and Source • ESD Protection − Human Body Model 5000 V • Active Over−Voltage Gate to Drain Clamp • Scalable to Lower or Higher RDS(on) • Internal Series Gate Resistance • These are Pb−Free Devices Benefits • High Energy Capability for Inductive Loads • L

Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection

Features • Diode Clamp Between Gate and Source • ESD Protection − Human Body Model 5000 V • Active Over−Voltage Gate to Drain Clamp • Scalable to Lower or Higher RDS(on) • Internal Series Gate Resistance • These are Pb−Free Devices Benefits • High Energy Capability for Inductive Loads • L

Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection

Features • Diode Clamp Between Gate and Source • ESD Protection − Human Body Model 5000 V • Active Over−Voltage Gate to Drain Clamp • Scalable to Lower or Higher RDS(on) • Internal Series Gate Resistance • These are Pb−Free Devices Benefits • High Energy Capability for Inductive Loads • L

Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection

Features • Diode Clamp Between Gate and Source • ESD Protection − Human Body Model 5000 V • Active Over−Voltage Gate to Drain Clamp • Scalable to Lower or Higher RDS(on) • Internal Series Gate Resistance • These are Pb−Free Devices Benefits • High Energy Capability for Inductive Loads • L

Protected Power MOSFET

文件：89.91 Kbytes Page：9 Pages

Protected Power MOSFET

文件：89.91 Kbytes Page：9 Pages

Protected Power MOSFET

文件：62.15 Kbytes Page：2 Pages

Protected Power MOSFET

文件：89.91 Kbytes Page：9 Pages

Protected Power MOSFET 2.6 A, 52 V, N?묬hannel, Logic Level, Clamped MOSFET w/ ESD Protection

文件：126.7 Kbytes Page：9 Pages

Protected Power MOSFET

文件：89.91 Kbytes Page：9 Pages

Protected Power MOSFET 2.6 A, 52 V, N?묬hannel, Logic Level, Clamped MOSFET w/ ESD Protection

文件：126.7 Kbytes Page：9 Pages

Protected Power MOSFET

文件：62.15 Kbytes Page：2 Pages

封装/外壳：TO-261-4，TO-261AA 包装：托盘 描述：IC PWR MOSFET N-CH SOT223 集成电路（IC） 配电开关，负载驱动器

封装/外壳：TO-261-4，TO-261AA 包装：托盘 描述：IC PWR MOSFET N-CH SOT223 集成电路（IC） 配电开关，负载驱动器

Protected Power MOSFET 2.6 A, 52 V, N?묬hannel, Logic Level, Clamped MOSFET w/ ESD Protection

文件：126.7 Kbytes Page：9 Pages

Protected Power MOSFET

文件：89.91 Kbytes Page：9 Pages

Protected Power MOSFET 2.6 A, 52 V, N?묬hannel, Logic Level, Clamped MOSFET w/ ESD Protection

文件：154.27 Kbytes Page：8 Pages

Protected Power MOSFET 2.6 A, 52 V, N?묬hannel, Logic Level, Clamped MOSFET w/ ESD Protection

文件：154.27 Kbytes Page：8 Pages

Protected Power MOSFET

文件：89.91 Kbytes Page：9 Pages

Protected Power MOSFET 2.6 A, 52 V, N?묬hannel, Logic Level, Clamped MOSFET w/ ESD Protection

文件：126.7 Kbytes Page：9 Pages

0.800-INCH SEVEN SEGMENT DISPLAYS

0.800-INCH SEVEN SEGMENT DISPLAYS

VTB Process Photodiodes

PRODUCT DESCRIPTION Planar silicon photodiode in a recessed ceramic package. Chip is coated with a protective layer of epoxy. These diodes have very high shunt resistance and have good blue response.

VTB Process Photodiodes

PRODUCT DESCRIPTION Planar silicon photodiode in recessed ceramic package. The package incorporates an infrared rejection filter. These diodes have very high shunt resistance and have good blue response.

VTP Process Photodiodes

PRODUCT DESCRIPTION Planar silicon photodiode in a recessed ceramic package. Chip is coated with a protective layer of clear epoxy. These diodes exhibit low dark current under reverse bias and fast speed of response.

0.800-INCH SEVEN SEGMENT DISPLAYS

文件：453.28 Kbytes Page：4 Pages