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NCV8440价格
参考价格：￥2.6195
型号：NCV8440ASTT1G 品牌：ON 备注：这里有NCV8440多少钱，2025年最近7天走势，今日出价，今日竞价，NCV8440批发/采购报价，NCV8440行情走势销售排行榜，NCV8440报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NCV8440 | Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection Features • Diode Clamp Between Gate and Source • ESD Protection − Human Body Model 5000 V • Active Over−Voltage Gate to Drain Clamp • Scalable to Lower or Higher RDS(on) • Internal Series Gate Resistance • These are Pb−Free Devices Benefits • High Energy Capability for Inductive Loads • L | ONSEMI 安森美半导体 |   | |
NCV8440 | 箝位 MOSFET，N 沟道，带 ESD 保护 | ONSEMI 安森美半导体 | | |
NCV8440 | Protected Power MOSFET 2.6 A, 52 V, N?묬hannel, Logic Level, Clamped MOSFET w/ ESD Protection 文件：154.27 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | |
NCV8440 | Protected Power MOSFET 文件：89.91 Kbytes Page：9 Pages | ONSEMI 安森美半导体 | | |
Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection Features • Diode Clamp Between Gate and Source • ESD Protection − Human Body Model 5000 V • Active Over−Voltage Gate to Drain Clamp • Scalable to Lower or Higher RDS(on) • Internal Series Gate Resistance • These are Pb−Free Devices Benefits • High Energy Capability for Inductive Loads • L | ONSEMI 安森美半导体 | | ||
Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection Features • Diode Clamp Between Gate and Source • ESD Protection − Human Body Model 5000 V • Active Over−Voltage Gate to Drain Clamp • Scalable to Lower or Higher RDS(on) • Internal Series Gate Resistance • These are Pb−Free Devices Benefits • High Energy Capability for Inductive Loads • L | ONSEMI 安森美半导体 | | ||
Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection Features • Diode Clamp Between Gate and Source • ESD Protection − Human Body Model 5000 V • Active Over−Voltage Gate to Drain Clamp • Scalable to Lower or Higher RDS(on) • Internal Series Gate Resistance • These are Pb−Free Devices Benefits • High Energy Capability for Inductive Loads • L | ONSEMI 安森美半导体 | | ||
Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection Features • Diode Clamp Between Gate and Source • ESD Protection − Human Body Model 5000 V • Active Over−Voltage Gate to Drain Clamp • Scalable to Lower or Higher RDS(on) • Internal Series Gate Resistance • These are Pb−Free Devices Benefits • High Energy Capability for Inductive Loads • L | ONSEMI 安森美半导体 | | ||
Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection Features • Diode Clamp Between Gate and Source • ESD Protection − Human Body Model 5000 V • Active Over−Voltage Gate to Drain Clamp • Scalable to Lower or Higher RDS(on) • Internal Series Gate Resistance • These are Pb−Free Devices Benefits • High Energy Capability for Inductive Loads • L | ONSEMI 安森美半导体 | | ||
Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection Features • Diode Clamp Between Gate and Source • ESD Protection − Human Body Model 5000 V • Active Over−Voltage Gate to Drain Clamp • Scalable to Lower or Higher RDS(on) • Internal Series Gate Resistance • These are Pb−Free Devices Benefits • High Energy Capability for Inductive Loads • L | ONSEMI 安森美半导体 | | ||
Protected Power MOSFET 文件：89.91 Kbytes Page：9 Pages | ONSEMI 安森美半导体 | | ||
Protected Power MOSFET 文件：89.91 Kbytes Page：9 Pages | ONSEMI 安森美半导体 | | ||
箝位 MOSFET，N 沟道，带 ESD 保护 | ONSEMI 安森美半导体 | | ||
Protected Power MOSFET 文件：62.15 Kbytes Page：2 Pages | ONSEMI 安森美半导体 | | ||
Protected Power MOSFET 文件：89.91 Kbytes Page：9 Pages | ONSEMI 安森美半导体 | | ||
Protected Power MOSFET 2.6 A, 52 V, N?묬hannel, Logic Level, Clamped MOSFET w/ ESD Protection 文件：126.7 Kbytes Page：9 Pages | ONSEMI 安森美半导体 | | ||
Protected Power MOSFET 文件：89.91 Kbytes Page：9 Pages | ONSEMI 安森美半导体 | | ||
Protected Power MOSFET 2.6 A, 52 V, N?묬hannel, Logic Level, Clamped MOSFET w/ ESD Protection 文件：126.7 Kbytes Page：9 Pages | ONSEMI 安森美半导体 | | ||
Protected Power MOSFET 文件：62.15 Kbytes Page：2 Pages | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-261-4，TO-261AA 包装：托盘 描述：IC PWR MOSFET N-CH SOT223 集成电路（IC） 配电开关，负载驱动器 | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-261-4，TO-261AA 包装：托盘 描述：IC PWR MOSFET N-CH SOT223 集成电路（IC） 配电开关，负载驱动器 | ONSEMI 安森美半导体 | | ||
Protected Power MOSFET 2.6 A, 52 V, N?묬hannel, Logic Level, Clamped MOSFET w/ ESD Protection 文件：154.27 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
Protected Power MOSFET 2.6 A, 52 V, N?묬hannel, Logic Level, Clamped MOSFET w/ ESD Protection 文件：126.7 Kbytes Page：9 Pages | ONSEMI 安森美半导体 | | ||
Protected Power MOSFET 文件：89.91 Kbytes Page：9 Pages | ONSEMI 安森美半导体 | | ||
Protected Power MOSFET 文件：89.91 Kbytes Page：9 Pages | ONSEMI 安森美半导体 | | ||
Protected Power MOSFET 2.6 A, 52 V, N?묬hannel, Logic Level, Clamped MOSFET w/ ESD Protection 文件：126.7 Kbytes Page：9 Pages | ONSEMI 安森美半导体 | | ||
Protected Power MOSFET 2.6 A, 52 V, N?묬hannel, Logic Level, Clamped MOSFET w/ ESD Protection 文件：154.27 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
FEMALE THREADED STANDOFFS [KEYSTONE] THREADED STANDOFFS | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
FEMALE THREADED STANDOFFS [KEYSTONE] THREADED STANDOFFS | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
MALE/FEMALE THREADED STANDOFFS 文件：310.8 Kbytes Page：1 Pages | KEYSTONE Keystone Electronics Corp. | | ||
FEMALE THREADED STANDOFFS 文件：211.1 Kbytes Page：1 Pages | KEYSTONE Keystone Electronics Corp. | | ||
FEMALE THREADED STANDOFFS 文件：211.1 Kbytes Page：1 Pages | KEYSTONE Keystone Electronics Corp. | |
NCV8440产品属性
- 类型
描述
- 型号
NCV8440
- 制造商
ONSEMI
- 制造商全称
ON Semiconductor
- 功能描述
Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
24+ |
SOT-223(TO-261)4L |
8866 |
||||
ON/安森美 |
24+ |
SOT-223 |
10000 |
十年沉淀唯有原装 |
|||
ON(安森美) |
2021/2022+ |
标准封装 |
8000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|||
ON |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
ON(安森美) |
2511 |
SOT-223 |
4525 |
电子元器件采购降本 30%!公司原厂直采,砍掉中间差价 |
|||
ON/ |
24+ |
SOT223 |
5000 |
全新原装正品,现货销售 |
|||
ON/安森美 |
23+ |
SOT-223 |
5020 |
原装正品实单必成 |
|||
ON(安森美) |
25+ |
标准封装 |
8000 |
原装，请咨询 |
|||
ON |
24+ |
NA |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
ON/安森美 |
23+ |
SOT223 |
25035 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
NCV8440规格书下载地址
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NCV8440数据表相关新闻
NCV8406ADTRKG
NCV8406ADTRKG
2023-11-16NCV8403BDTRKG
NCV8403BDTRKG
2023-3-9NCV8450ASTT3G
原装代理
2022-12-30NCV8445DR2G
进口代理
2022-10-21NCV8402ASTT3G ON/安森美 21+ SOT-223
https://hfx03.114ic.com/
2022-2-22NCV8450ASTT3G 原盒原包现货
原装正品现货热卖中，焕盛达-专注原装 用芯服务；
2020-7-22
DdatasheetPDF页码索引
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