丝印：6602N；NCE N and P-Channel Enhancement Mode Power MOSFET

Description The NCE6602N uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other Switching application. General Features ● N-Channel ● VDS = 30V,ID = 3.5A RDS(ON)

Complementary MOSFET

丝印：6602N；N and P-Channel Enhancement Mode Power MOSFET

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PHASE SHIFTER DC TO 2, 4 AND 8 GHZ, COAXIAL HIGH POWER

FEATURES • Type N Connectors Standard • Options from DC to 8Ghz • High Power, Trombone Style Coaxial Structure • Military Grade Materials and Processing • -40 to + 125º C Operating Temperature Range

PHASE SHIFTER DC TO 2, 4 AND 8 GHz, COAXIAL HIGH POWER

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N-Channel Super Trench Power MOSFET

文件：874.32 Kbytes Page：6 Pages

N-Channel Super Trench Power MOSFET

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1550 MHz to 2150 MHz Rx Mixer with Integrated Fractional-N PLL and VCO

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