N- and P-Channel V (D-S) MOSFET

文件：2.067949 Mbytes Page：10 Pages

NCE N and P-Channel Enhancement Mode Power MOSFET

文件：476.38 Kbytes Page：11 Pages

N+P沟道MOSFET

N- and P-Channel 20V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

NCE N and P-Channel Enhancement Mode Power MOSFET

Description The NCE6602N uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other Switching application. General Features ● N-Channel ● VDS = 30V,ID = 3.5A RDS(ON)

Complementary MOSFET

N and P-Channel Enhancement Mode Power MOSFET

文件：1.34224 Mbytes Page：10 Pages

PHASE SHIFTER DC TO 2, 4 AND 8 GHZ, COAXIAL HIGH POWER

FEATURES • Type N Connectors Standard • Options from DC to 8Ghz • High Power, Trombone Style Coaxial Structure • Military Grade Materials and Processing • -40 to + 125º C Operating Temperature Range

PHASE SHIFTER DC TO 2, 4 AND 8 GHz, COAXIAL HIGH POWER

文件：175.77 Kbytes Page：3 Pages

N-Channel Super Trench Power MOSFET

文件：874.32 Kbytes Page：6 Pages

N-Channel Super Trench Power MOSFET

文件：874.32 Kbytes Page：6 Pages

1550 MHz to 2150 MHz Rx Mixer with Integrated Fractional-N PLL and VCO

文件：517.82 Kbytes Page：24 Pages