P-Channel 60-V (D-S) MOSFET

FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature • Dynamic dV/dt Rating • Low Thermal Resistance • Lead (Pb)-free Available

P沟道 MOSFET

丝印代码：NCE60P04R；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE60P04R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features ● VDS =-60V,ID =-4.3A RDS(ON)

丝印代码：NCE60P04R；P-Channel Enhancement Mode Power MOSFET

文件：987.53 Kbytes Page：6 Pages

丝印代码：NCE60P04R；P-Channel Enhancement Mode Power MOSFET

文件：1.00162 Mbytes Page：6 Pages

丝印代码：60P04SN；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE60P04SN uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features ● VDS =-60V,ID =-4A RDS(ON)

丝印代码：60P04Y；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE60P04Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features ● VDS =-60V,ID =-4A RDS(ON)

P-Channel 60-V (D-S) MOSFET

FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature • Dynamic dV/dt Rating • Low Thermal Resistance • Lead (Pb)-free Available

12-150V P-Channel Trench MOSFET

P沟道 MOSFET

丝印代码：60P04SN；LCE P-Channel Enhancement Mode Power MOSFET

文件：946.27 Kbytes Page：6 Pages

丝印代码：60P04Y；LCE P-Channel Enhancement Mode Power MOSFET

文件：818.33 Kbytes Page：6 Pages