丝印代码：60P03Y；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE60P03Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features ● VDS =-60V,ID =-3A RDS(ON)

12-150V P-Channel Trench MOSFET

60A, 30V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs

Features • 60A, 30V • rDS(ON) = 0.027Ω • Temperature Compensating PSPICE® Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175oC Operating Temperature • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs

These P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg

60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs

These P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg

ULTRAFAST RECTIFIER PDP ENERGY RECOVERY

DESCRIPTION The STTH60P03SW is an Ultrafast Recovery Power Rectifier dedicated to energy recovery in PDP application. The key parameters of the DERC diode for the energy recovery cicuit have been optimized in order to decrease power losses. FEATURES AND BENEFITS ■ Ultrafast recovery

ULTRAFAST RECTIFIER PDP ENERGY RECOVERY

DESCRIPTION The STTH60P03SW is an Ultrafast Recovery Power Rectifier dedicated to energy recovery in PDP application. The key parameters of the DERC diode for the energy recovery cicuit have been optimized in order to decrease power losses. FEATURES AND BENEFITS ■ Ultrafast recovery