型号 功能描述 生产厂家 企业 LOGO 操作
NCE60P03Y

NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE60P03Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features ● VDS =-60V,ID =-3A RDS(ON)

NCEPOWER

新洁能

NCE60P03Y

12-150V P-Channel Trench MOSFET

NCEPOWER

新洁能

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -60A, RDS(ON) = 9mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. RDS(ON) = 15mW @VGS = -4.5V.

CET-MOS

华瑞

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -60A, RDS(ON) = 9mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. RDS(ON) = 15mW @VGS = -4.5V.

CET-MOS

华瑞

P-Channel Enhancement Mode Power MOSFET

文件:730.25 Kbytes Page:5 Pages

KERSEMI

P-Channel Enhancement Mode Power MOSFET

文件:896.46 Kbytes Page:5 Pages

HUILIDAShenzhen hui lida electronic co., LTD

汇利达广东汇利达半导体有限公司

-30V P-Channel Enhancement Mode MOSFET

文件:1.59007 Mbytes Page:5 Pages

LEIDITECH

雷卯电子

更新时间:2026-1-1 10:05:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
PRODUCTION
1905+
SOT-23-6L
30000
原装正品
NCE/新洁能
25+
SOT23-3L
60000
全新原装现货特价销售,欢迎来电查询
NCEPOWER
2022+
SOT-223
32500
原厂代理 终端免费提供样品
NK/南科功率
2025+
SOT-23-3L
986966
国产
NCEPOWER
23+
SOT-23-6L
50000
原装正品 支持实单
NCE/新洁能
22+
SOT-23-6L
20000
只做原装
NCE/新洁能
23+
SOT-23-6L
21895
原厂授权一级代理,专业海外优势订货,价格优势、品种
NCE/新洁能
24+
SOT23-3L
100000
原装现货
NCE
23+
-
1900
华南总代
NCE新洁能
22+
SOT23-3L
100000
新结能全线供应,支持终端生产

NCE60P03Y数据表相关新闻