型号 功能描述 生产厂家 企业 LOGO 操作
NCE60P03R

丝印代码:NCE60P03R;NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE60P03R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. Application ● Load switch ● PWM application General Features ● VDS =-60V,ID =-3A RDS(ON)

NCEPOWER

新洁能

NCE60P03R

12-150V P-Channel Trench MOSFET

NCEPOWER

新洁能

60A, 30V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs

Features • 60A, 30V • rDS(ON) = 0.027Ω • Temperature Compensating PSPICE® Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175oC Operating Temperature • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

FAIRCHILD

仙童半导体

60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs

These P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg

INTERSIL

60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs

These P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg

INTERSIL

ULTRAFAST RECTIFIER PDP ENERGY RECOVERY

DESCRIPTION The STTH60P03SW is an Ultrafast Recovery Power Rectifier dedicated to energy recovery in PDP application. The key parameters of the DERC diode for the energy recovery cicuit have been optimized in order to decrease power losses. FEATURES AND BENEFITS ■ Ultrafast recovery

STMICROELECTRONICS

意法半导体

ULTRAFAST RECTIFIER PDP ENERGY RECOVERY

DESCRIPTION The STTH60P03SW is an Ultrafast Recovery Power Rectifier dedicated to energy recovery in PDP application. The key parameters of the DERC diode for the energy recovery cicuit have been optimized in order to decrease power losses. FEATURES AND BENEFITS ■ Ultrafast recovery

STMICROELECTRONICS

意法半导体

更新时间:2026-3-17 14:27:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NCE/新洁能
2511
SOT-23-3L
360000
电子元器件采购降本30%!原厂直采,砍掉中间差价
NCE/新洁能
24+
SOT23-3L
100000
原装现货
NCE新洁能
21+
SOT23-3L
25000
进口原装!长期供应!绝对优势价格(诚信经营
NCE/新洁能
21+
SOT-223
5000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
NCE/新洁能
2223+
SOT23-3L
26800
只做原装正品假一赔十为客户做到零风险
NCEPOWER
2022+
SOT-223
32500
原厂代理 终端免费提供样品
NCE新洁能
22+
SOT23-3L
95000
专业配单,原装正品假一罚十,代理渠道价格优
NCE/新洁能
21+
SOT-223
30000
百域芯优势 实单必成 可开13点增值税
NK/南科功率
2025+
SOT-23-3L
986966
国产
NCE新洁能
25+
SOT23-3L
100000
新结能全线供应,支持终端生产

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