NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE60P03R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. Application ● Load switch ● PWM application General Features ● VDS =-60V,ID =-3A RDS(ON)

12-150V P-Channel Trench MOSFET

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -60A, RDS(ON) = 9mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. RDS(ON) = 15mW @VGS = -4.5V.

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -60A, RDS(ON) = 9mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. RDS(ON) = 15mW @VGS = -4.5V.

P-Channel Enhancement Mode Power MOSFET

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P-Channel Enhancement Mode Power MOSFET

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-30V P-Channel Enhancement Mode MOSFET

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