| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NCE60H10 | NCE N-Channel Enhancement Mode Power MOSFET 文件:398.44 Kbytes Page:7 Pages | NCEPOWER 新洁能 | ||
NCE60H10 | N-Channel 60 V (D-S) MOSFET 文件:994.81 Kbytes Page:7 Pages | VBSEMI 微碧半导体 | ||
NCE60H10 | 12-200V N-Channel Trench MOSFET | NCEPOWER 新洁能 | ||
丝印代码:NCE60H10D;NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H10D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features ● VDS =60V,ID =100A RDS(ON) | NCEPOWER 新洁能 | |||
丝印代码:NCE60H10K;NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features ● VDS =60V,ID =100A RDS(ON) | NCEPOWER 新洁能 | |||
12-200V N-Channel Trench MOSFET | NCEPOWER 新洁能 | |||
NCE N-Channel Enhancement Mode Power MOSFET 文件:395.2 Kbytes Page:7 Pages | NCEPOWER 新洁能 | |||
12-200V N-Channel Trench MOSFET | NCEPOWER 新洁能 | |||
N-Channel 60 V (D-S) MOSFET 文件:986.95 Kbytes Page:7 Pages | VBSEMI 微碧半导体 | |||
丝印代码:60H10N;Single N?묬hannel Power MOSFET 文件:759.06 Kbytes Page:7 Pages | PJSEMI 平晶半导体 |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NCE新洁能 |
25+ |
TO-220F |
100000 |
新结能全线供应,支持终端生产 |
|||
NCE/新洁能 |
21+ |
TO-220F |
30000 |
百域芯优势 实单必成 可开13点增值税 |
|||
NCE/新洁能 |
23+ |
TO-220 |
12500 |
原装正品假一赔百 |
|||
新洁能 |
TO-220 |
3500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
NCE/新洁能 |
2511 |
TO-252 |
360000 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
NCE |
24+ |
TO-220 |
39500 |
进口原装现货 支持实单价优 |
|||
NCE POWER |
2424 |
con |
100 |
现货常备产品原装可到京北通宇商城查价格 |
|||
NCE新洁能 |
25+ |
TO-220F |
55000 |
原厂代理部份现货价优 |
|||
NCE Power(新洁能) |
25+ |
TO-220-3 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
|||
NCE/新洁能 |
24+ |
TO-220 |
5000 |
只做原装,欢迎询价,量大价优 |
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NCE60H10规格书下载地址
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NCE60H10数据表相关新闻
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2021-7-26
DdatasheetPDF页码索引
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