High-speed diode

DESCRIPTION The PMBD6050 is a high-speed switching diode fabricated in planar technology, and encapsulated in the small SOT23 plastic SMD package. FEATURES • Small plastic SMD package • High switching speed: max. 4 ns • Continuous reverse voltage: max. 70 V • Repetitive peak reverse voltage:

High-speed diode

丝印代码：5A；High-speed diode

FEATURES •Small plastic SMD package •High switching speed: max. 4 ns •Continuous reverse voltage: max. 70 V •Repetitive peak reverse voltage: max. 85 V •Repetitive peak forward current: max. 500 mA. APPLICATIONS •High-speed switching in thick and thin-film circuits. DESCRIPTION The PM

High-speed diode

High-speed diode

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：散装 描述：DIODE GEN PURP 70V 215MA TO236AB 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：散装 描述：DIODE GEN PURP 70V 215MA TO236AB 分立半导体产品 二极管 - 整流器 - 单

High-speed diode

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SWITCHING DIODE

Switching Diode

N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, a

SCRs 1-70 AMPS NON-SENSITIVE GATE

Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip

Silicon Switching Diode

Silicon Switching Diode ● For high-speed switching applications