NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE3415Y uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features ● VDS = -20V,ID =-4A RDS(ON)

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

P-Channel Enhancement Mode Power MOSFET

Description The 3415A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

-4.0A竊?20V P-CHANNEL MOSFET

文件：122 Kbytes Page：5 Pages

12V P-channel MOS FET

文件：165.46 Kbytes Page：2 Pages

Heyco® PG and Metric Threaded Plugs

文件：114.81 Kbytes Page：1 Pages

Heyco® PG and Metric Threaded Plugs

文件：114.81 Kbytes Page：1 Pages