丝印代码：3415EX；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE3415E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features ● VDS = -20V,ID =-4A RDS(ON)

12-150V P-Channel Trench MOSFET

Dual MOSFET Driver with Bootstrapping

GENERAL DESCRIPTION The ADP3415 is a dual MOSFET driver optimized for driving two N-channel FETs that are the two switches in the nonisolated synchronous buck power converter topology. Each driver size is optimized for performance in notebook PC regulators for CPUs in the 20 A range. The high-sid

Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

MSP 34x5G Multistandard Sound Processor Family

[Micronas] Introduction The MSP 34x5G family of single-chip Multistandard Sound Processors covers the sound processing of all analog TV standards worldwide, as well as the NICAM digital sound standards. The full TV sound processing, starting with analog sound IF signal-in, down to processed anal

Multistandard Sound Processors

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