位置:首页 > IC中文资料 > NB313E

NB313E晶体管资料

  • NB313E别名:NB313E三极管、NB313E晶体管、NB313E晶体三极管

  • NB313E生产厂家:美国国民半导体公司

  • NB313E制作材料:Si-NPN

  • NB313E性质:低频或音频放大 (LF)_TR_输出极 (E)

  • NB313E封装形式:直插封装

  • NB313E极限工作电压:70V

  • NB313E最大电流允许值:1.5A

  • NB313E最大工作频率:<1MHZ或未知

  • NB313E引脚数:3

  • NB313E最大耗散功率:1W

  • NB313E放大倍数

  • NB313E图片代号:A-10

  • NB313Evtest:70

  • NB313Ehtest:999900

  • NB313Eatest:1.5

  • NB313Ewtest:1

  • NB313E代换 NB313E用什么型号代替:BD519,BD527,3DK109C,

型号 功能描述 生产厂家 企业 LOGO 操作

HIGH-FREQUENCY TRANSISTOR NPN SILICON

The RF Line NPN Silicon High-Frequency Transistor . . . designed for wideband amplifier, driver or oscillator applications in military, mobile, and aircraft radio. • Specified 28 Volt, 400 MHz Characteristics — Output Power = 1.0 Watt Power Gain = 15 dB Min Efficienc

MOTOROLA

摩托罗拉

Silicon NPN Transistor High Gain, Low Noise, VHF Mixer and VHF/RF Amp

Description: The NTE 313 is a silicon NPN transistor specifically designed for VHF mixer and VHF/RF amplifier applications. This device features high power gain, low noise, and excellent forward AGC characteristics.

NTE

PIN Photodiode

PIN Photodiode For optical control systems Features • Fast response which is well suited to high speed modulated light detection : tr, tf = 50 ns (typ.) • High sensitivity, high reliability • Peak sensitivity wavelength matched with infrared light emitting diodes : λP = 960 nm (typ.) • Wide

PANASONIC

松下

Reference Diode

文件:126.55 Kbytes Page:4 Pages

NSC

国半

Reference Diode

文件:126.55 Kbytes Page:4 Pages

NSC

国半

更新时间:2026-5-14 19:39:02
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MOTOROL
20+
高频管
29516
高频管全新原装主营-可开原型号增税票
MACOM
24+
VQFN
7850
只做原装正品现货或订货假一赔十!
MOTOROLA
23+
TO-51r
600
专营高频管模块,全新原装!
M
24+
66800
原厂授权一级代理,专注汽车、医疗、工业、新能源!
MOTOROLA/摩托罗拉
24+
TO-51R
250
现货供应
MINI
24+
SMD
3600
MINI专营品牌全新原装正品假一赔十
M/A-COM
22+
NA
5000
只做原装,价格优惠,长期供货。
MOTOROLA
25+
2789
全新原装自家现货!价格优势!
MOTOROLA/摩托罗拉
25+
TO-55r
1200
全新原装现货,价格优势
MOTOROLA
25+
14
公司优势库存 热卖中!

NB313E数据表相关新闻