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NB313晶体管资料
NB313E别名：NB313E三极管、NB313E晶体管、NB313E晶体三极管
NB313E生产厂家：美国国民半导体公司
NB313E制作材料：Si-NPN
NB313E性质：低频或音频放大 （LF）_TR_输出极 （E）
NB313E封装形式：直插封装
NB313E极限工作电压：70V
NB313E最大电流允许值：1.5A
NB313E最大工作频率：<1MHZ或未知
NB313E引脚数：3
NB313E最大耗散功率：1W
NB313E放大倍数：
NB313E图片代号：A-10
NB313Evtest：70
NB313Ehtest：999900
- NB313Eatest：1.5
NB313Ewtest：1
NB313E代换 NB313E用什么型号代替：BD519,BD527,3DK109C,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NB313 | 1.5Amp complementary power drivers 文件：137.58 Kbytes Page：4 Pages | NSC 国半 |   | |
HIGH-FREQUENCY TRANSISTOR NPN SILICON The RF Line NPN Silicon High-Frequency Transistor . . . designed for wideband amplifier, driver or oscillator applications in military, mobile, and aircraft radio. • Specified 28 Volt, 400 MHz Characteristics — Output Power = 1.0 Watt Power Gain = 15 dB Min Efficienc | MOTOROLA 摩托罗拉 | | ||
Silicon NPN Transistor High Gain, Low Noise, VHF Mixer and VHF/RF Amp Description: The NTE 313 is a silicon NPN transistor specifically designed for VHF mixer and VHF/RF amplifier applications. This device features high power gain, low noise, and excellent forward AGC characteristics. | NTE | | ||
PIN Photodiode PIN Photodiode For optical control systems Features • Fast response which is well suited to high speed modulated light detection : tr, tf = 50 ns (typ.) • High sensitivity, high reliability • Peak sensitivity wavelength matched with infrared light emitting diodes : λP = 960 nm (typ.) • Wide | PANASONIC 松下 | | ||
Reference Diode 文件：126.55 Kbytes Page：4 Pages | NSC 国半 | | ||
Reference Diode 文件：126.55 Kbytes Page：4 Pages | NSC 国半 | |
NB313产品属性
- 类型
描述
- 型号
NB313
- 制造商
NSC
- 制造商全称
National Semiconductor
- 功能描述
1.5Amp complementary power drivers
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NS/国半 |
2447 |
TO92 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
NB313芯片相关品牌
NB313规格书下载地址
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NB313数据表相关新闻
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DdatasheetPDF页码索引
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