位置：首页 > IC中文资料第1422页 > NAND512W3A2CZA6E
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NAND512W3A2CZA6E | 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories SUMMARY DESCRIPTION The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that uses the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page family. The devices range from 128Mbits to 1Gbit and operate with either a 1.8V or 3V voltage supp | STMICROELECTRONICS 意法半导体 |   | |
NAND512W3A2CZA6E | 512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories Description The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that uses the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page family. The NAND512R3A2C, NAND512R4A2C, NAND512W3A2C, and NAND512W4A2C have a density of 512 Mbi | NUMONYX | | |
NAND512W3A2CZA6E | 512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 文件：674.58 Kbytes Page：51 Pages | STMICROELECTRONICS 意法半导体 | | |
NAND512W3A2CZA6E | 封装/外壳：63-TFBGA 包装：管件 描述：IC FLSH 512MBIT PARALLEL 63VFBGA 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories SUMMARY DESCRIPTION The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that uses the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page family. The devices range from 128Mbits to 1Gbit and operate with either a 1.8V or 3V voltage supp | STMICROELECTRONICS 意法半导体 | | ||
512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories Description The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that uses the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page family. The NAND512R3A2C, NAND512R4A2C, NAND512W3A2C, and NAND512W4A2C have a density of 512 Mbi | NUMONYX | |
NAND512W3A2CZA6E产品属性
- 类型
描述
- 型号
NAND512W3A2CZA6E
- 功能描述
IC FLASH 512MBIT 63VFBGA
- RoHS
是
- 类别
集成电路(IC) >> 存储器
- 系列
-
- 产品变化通告
Product Discontinuation 26/Apr/2010
- 标准包装
136
- 系列
- 格式 -
- 存储器
RAM
- 存储器类型
SRAM - 同步，DDR II
- 存储容量
18M（1M x 18）
- 速度
200MHz
- 接口
并联
- 电源电压
1.7 V ~ 1.9 V
- 工作温度
0°C ~ 70°C
- 封装/外壳
165-TBGA
- 供应商设备封装
165-CABGA（13x15）
- 包装
托盘
- 其它名称
71P71804S200BQ
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Micron Technology Inc. |
21+ |
78-FBGA |
5280 |
进口原装!长期供应!绝对优势价格(诚信经营 |
|||
micron(镁光) |
25+ |
VFBGA-63(9x11) |
6843 |
样件支持,可原厂排单订货! |
|||
micron(镁光) |
25+ |
VFBGA-63(9x11) |
6895 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
ST |
26+ |
标准封装 |
890000 |
一级总代理商原厂原装大批量现货
一站式服务 |
|||
ST/意法 |
24+ |
BGA |
990000 |
明嘉莱只做原装正品现货 |
|||
ST |
24+ |
BGA |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
Micron Technology Inc. |
18500 |
全新原厂原装现货!受权代理!可送样可提供技术支持! |
|||||
SST |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
Numonyx/STMi |
23+ |
63-VFBGA |
65480 |
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DdatasheetPDF页码索引
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