位置：首页 > IC中文资料第247页 > NAND256R3A2BZA6E
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NAND256R3A2BZA6E | 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories SUMMARY DESCRIPTION The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that uses the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page family. The devices range from 128Mbits to 1Gbit and operate with either a 1.8V or 3V voltage supp | STMICROELECTRONICS 意法半导体 |   | |
NAND256R3A2BZA6E | 封装/外壳：55-TFBGA 包装：托盘 描述：IC FLSH 256MBIT PARALLEL 55VFBGA 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | |
NAND256R3A2BZA6E | IC FLASH 256M PARALLEL 55VFBGA | Micron 美光 | | |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories SUMMARY DESCRIPTION The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that uses the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page family. The devices range from 128Mbits to 1Gbit and operate with either a 1.8V or 3V voltage supp | STMICROELECTRONICS 意法半导体 | | ||
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories SUMMARY DESCRIPTION The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that uses the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page family. The devices range from 128Mbits to 1Gbit and operate with either a 1.8V or 3V voltage supp | STMICROELECTRONICS 意法半导体 | | ||
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories SUMMARY DESCRIPTION The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that uses the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page family. The devices range from 128Mbits to 1Gbit and operate with either a 1.8V or 3V voltage supp | STMICROELECTRONICS 意法半导体 | |
NAND256R3A2BZA6E产品属性
- 类型
描述
- 型号
NAND256R3A2BZA6E
- 功能描述
闪存 128 Mbit 256 Mbit 512 Mbit 1 Gbit
- RoHS
否
- 制造商
ON Semiconductor
- 数据总线宽度
1 bit
- 存储类型
Flash
- 存储容量
2 MB
- 结构
256 K x 8
- 接口类型
SPI
- 电源电压-最大
3.6 V
- 电源电压-最小
2.3 V
- 最大工作电流
15 mA
- 工作温度
- 40 C to + 85 C
- 安装风格
SMD/SMT
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
2771 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
STM |
23+ |
NA |
3500 |
全新原装假一赔十 |
|||
ST |
24+ |
BGA48 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
ST/意法 |
0620+ |
BGA |
2771 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST/意法 |
23+ |
BGA |
20000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
25+23+ |
原厂原包 |
24191 |
绝对原装正品现货,全新深圳原装进口现货 |
||||
ST/意法 |
2402+ |
BGA |
8324 |
原装正品!实单价优! |
|||
ST/意法 |
2023+ |
BGA |
2771 |
原厂全新正品旗舰店优势现货 |
|||
ST |
24+ |
BGA |
10 |
||||
Micron |
22+ |
55VFBGA (8x10) |
9000 |
原厂渠道,现货配单 |
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DdatasheetPDF页码索引
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