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NAND256R3A2BZA6E中文资料

厂家型号

NAND256R3A2BZA6E

文件大小

916.59Kbytes

页面数量

57

功能描述

128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

闪存 128 Mbit 256 Mbit 512 Mbit 1 Gbit

数据手册

下载地址一下载地址二到原厂下载

生产厂商

STMICROELECTRONICS

NAND256R3A2BZA6E数据手册规格书PDF详情

SUMMARY DESCRIPTION

The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that uses

the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page family. The devices range from 128Mbits to 1Gbit and operate with either a 1.8V or 3V voltage supply. The size of a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on whether the device has a x8 or x16 bus width.

FEATURES SUMMARY

■ HIGH DENSITY NAND FLASH MEMORIES

– Up to 1 Gbit memory array

– Up to 32 Mbit spare area

– Cost effective solutions for mass storage applications

■ NAND INTERFACE

– x8 or x16 bus width

– Multiplexed Address/ Data

– Pinout compatibility for all densities

■ SUPPLY VOLTAGE

– 1.8V device: VDD = 1.7 to 1.95V

– 3.0V device: VDD = 2.7 to 3.6V

■ PAGE SIZE

– x8 device: (512 + 16 spare) Bytes

– x16 device: (256 + 8 spare) Words

■ BLOCK SIZE

– x8 device: (16K + 512 spare) Bytes

– x16 device: (8K + 256 spare) Words

■ PAGE READ / PROGRAM

– Random access: 12µs (max)

– Sequential access: 50ns (min)

– Page program time: 200µs (typ)

■ COPY BACK PROGRAM MODE

– Fast page copy without external buffering

■ FAST BLOCK ERASE

– Block erase time: 2ms (Typ)

■ STATUS REGISTER

■ ELECTRONIC SIGNATURE

■ CHIP ENABLE ‘DON’T CARE’ OPTION

– Simple interface with microcontroller

■ SERIAL NUMBER OPTION

■ HARDWARE DATA PROTECTION

– Program/Erase locked during Power transitions

■ DATA INTEGRITY

– 100,000 Program/Erase cycles

– 10 years Data Retention

■ RoHS COMPLIANCE

– Lead-Free Components are Compliant with the RoHS Directive

■ DEVELOPMENT TOOLS

– Error Correction Code software and hardware models

– Bad Blocks Management and Wear Leveling algorithms

– File System OS Native reference software

– Hardware simulation models

NAND256R3A2BZA6E产品属性

  • 类型

    描述

  • 型号

    NAND256R3A2BZA6E

  • 功能描述

    闪存 128 Mbit 256 Mbit 512 Mbit 1 Gbit

  • RoHS

  • 制造商

    ON Semiconductor

  • 数据总线宽度

    1 bit

  • 存储类型

    Flash

  • 存储容量

    2 MB

  • 结构

    256 K x 8

  • 接口类型

    SPI

  • 电源电压-最大

    3.6 V

  • 电源电压-最小

    2.3 V

  • 最大工作电流

    15 mA

  • 工作温度

    - 40 C to + 85 C

  • 安装风格

    SMD/SMT

  • 封装

    Reel

更新时间:2025-11-5 11:07:00
供应商 型号 品牌 批号 封装 库存 备注 价格
25+23+
原厂原包
24191
绝对原装正品现货,全新深圳原装进口现货
ST
6000
面议
19
DIP/SMD
Micron Technology Inc.
21+
60-FBGA
5280
进口原装!长期供应!绝对优势价格(诚信经营
Micron Technology Inc.
24+
55-VFBGA(8x10)
56200
一级代理/放心采购
MICRON
25+
BGA-55
1001
就找我吧!--邀您体验愉快问购元件!
STS
21+
BGA
10000
原装现货假一罚十
Micron
22+
55VFBGA (8x10)
9000
原厂渠道,现货配单
ST/意法
23+
BGA
20000
原厂授权一级代理,专业海外优势订货,价格优势、品种
ST
22+
BGA
12245
现货,原厂原装假一罚十!
ST/意法
0620+
BGA
2771
一级代理,专注军工、汽车、医疗、工业、新能源、电力