您好,欢迎来到114ic资料网！

芯片资料
  • 数据手册
  • 丝印反查
  • 库存查询
  • 行业新闻
  • 生产厂家
  • 替换型号
  • 晶体管

位置：首页 > IC中文资料第8365页 > NAND01GW4B2C

型号 功能描述 生产厂家 企业 LOGO 操作
NAND01GW4B2C

1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory

Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16

NUMONYX

NAND01GW4B2C

1-Gbit, 2112-byte/1056-word page,1.8 V/3 V, single level cell NAND flash memory

MICRON

美光

NAND01GW4B2CN5E

1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory

Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16

NUMONYX

NAND01GW4B2CN5F

1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory

Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16

NUMONYX

NAND01GW4B2CN6E

1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory

Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16

NUMONYX

NAND01GW4B2CN6F

1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory

Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16

NUMONYX

NAND01GW4B2CZA5E

1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory

Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16

NUMONYX

NAND01GW4B2CZA5F

1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory

Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16

NUMONYX

NAND01GW4B2CZA6E

1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory

Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16

NUMONYX

NAND01GW4B2CZA6F

1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory

Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16

NUMONYX

NAND01GW4B2CZF5E

1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory

Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16

NUMONYX

NAND01GW4B2CZF5F

1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory

Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16

NUMONYX

NAND01GW4B2CZF6E

1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory

Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16

NUMONYX

NAND01GW4B2CZF6F

1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory

Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16

NUMONYX

NAND01GW4B2CN1

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

文件：631.49 Kbytes Page：64 Pages

STMICROELECTRONICS

意法半导体

NAND01GW4B2CN1E

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

文件：711.53 Kbytes Page：62 Pages

STMICROELECTRONICS

意法半导体

NAND01GW4B2CN1E

1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory

文件：1.34162 Mbytes Page：60 Pages

NUMONYX

NAND01GW4B2CN1F

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

文件：711.53 Kbytes Page：62 Pages

STMICROELECTRONICS

意法半导体

NAND01GW4B2CN1F

1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory

文件：1.34162 Mbytes Page：60 Pages

NUMONYX

NAND01GW4B2CN6

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

文件：631.49 Kbytes Page：64 Pages

STMICROELECTRONICS

意法半导体

NAND01GW4B2CN6E

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

文件：711.53 Kbytes Page：62 Pages

STMICROELECTRONICS

意法半导体

NAND01GW4B2CN6E

1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory

文件：1.34162 Mbytes Page：60 Pages

NUMONYX

NAND01GW4B2CN6F

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

文件：711.53 Kbytes Page：62 Pages

STMICROELECTRONICS

意法半导体

NAND01GW4B2CN6F

1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory

文件：1.34162 Mbytes Page：60 Pages

NUMONYX

NAND01GW4B2CZA1

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

文件：631.49 Kbytes Page：64 Pages

STMICROELECTRONICS

意法半导体

NAND01GW4B2CZA1E

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

文件：711.53 Kbytes Page：62 Pages

STMICROELECTRONICS

意法半导体

NAND01GW4B2CZA1E

1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory

文件：1.34162 Mbytes Page：60 Pages

NUMONYX

NAND01GW4B2CZA1F

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

文件：711.53 Kbytes Page：62 Pages

STMICROELECTRONICS

意法半导体

NAND01GW4B2CZA1F

1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory

文件：1.34162 Mbytes Page：60 Pages

NUMONYX

NAND01GW4B2CZA6

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

文件：631.49 Kbytes Page：64 Pages

STMICROELECTRONICS

意法半导体

NAND01GW4B2CZA6E

1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory

文件：1.34162 Mbytes Page：60 Pages

NUMONYX

NAND01GW4B2CZA6E

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

文件：711.53 Kbytes Page：62 Pages

STMICROELECTRONICS

意法半导体

NAND01GW4B2CZA6F

1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory

文件：1.34162 Mbytes Page：60 Pages

NUMONYX

NAND01GW4B2CZA6F

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

文件：711.53 Kbytes Page：62 Pages

STMICROELECTRONICS

意法半导体

NAND01GW4B2CZB1

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

文件：631.49 Kbytes Page：64 Pages

STMICROELECTRONICS

意法半导体

NAND01GW4B2CZB6

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

文件：631.49 Kbytes Page：64 Pages

STMICROELECTRONICS

意法半导体

NAND01GW4B2B

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

文件：711.53 Kbytes Page：62 Pages

STMICROELECTRONICS

意法半导体

NAND01GW4B2C产品属性

  • 类型

    描述

  • 型号

    NAND01GW4B2C

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

NAND01GW4B2C供应商更多...

更新时间：2026-1-29 10:55:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市华斯顿科技有限公司
NAND02GR3B2AZB6E
25+23+
原厂原包
22830
绝对原装正品现货,全新深圳原装进口现货
询价
深圳市芯为科技有限公司
NAND02GAH0IZC5E
Micron
25+
电联咨询
7800
公司现货,提供拆样技术支持
询价
深圳市河锋鑫科技有限公司
NAND02GAH0IZC5E
Micron
22+
153LFBGA (11.5x13)
9000
原厂渠道,现货配单
询价
深圳市腾亿芯科技有限公司
NAND02G
ST
25+
BGA
16900
原装，请咨询
询价
深圳市中飞凌科技有限公司
NAND02G
ST
26+
BGA
60000
只有原装 可配单
询价
深圳诚思涵科技有限公司
NAND026R3B2DZA6
16+
QFN
2500
进口原装现货/价格优势!
询价
标准国际(香港)有限公司
NAND026W3B2DN6
ST
25+
576
公司优势库存 热卖中!
询价
深圳市福安瓯科技有限公司
NAND02GR3B2AZ86
ST
25+
BGA
2500
福安瓯为您提供真芯库存,真诚服务
询价
瀚佳科技(深圳)有限公司
NAND02GAH0IZC5E
Micron Technology Inc.
24+
153-LFBGA(11.5x13)
56200
一级代理/放心采购
询价
深圳市莱克讯科技有限公司
NAND02GR3B2CZA6
ST
1923+
BGA63
5896
原装进口现货库存专业工厂研究所配单供货
询价

NAND01GW4B2C芯片相关品牌

NAND01GW4B2C规格书下载地址

NAND01GW4B2C参数引脚图相关

NAND01GW4B2C数据表相关新闻

DdatasheetPDF页码索引

新数据|IC资料索引|IC关键词|IC库存|IC中文资料|关于我们|联系我们

Copyright © 2003-2026 www.114ic.cn All Rights Reserved 网站备案: 粤ICP备05011613号 粤公网安备 44030402000933号

声明：本站所有资料均来自互联网及网友提供，仅供学习和研究使用，无任何商业目的，版权归原作如有侵权请联系QQ：303638005，本站马上更正

字母索引：ABCDEFGHIJKLMNOPQRSTUVWXYZ0123456789

深圳市市场监督管理局企业主体身份公示