位置：首页 > IC中文资料第8295页 > NAND01GR3M2BZC5E
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NAND01GR3M2BZC5E | 256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP Summary description The NAND256-M, NAND512-M and NAND01G-M are Multi-Chip Packages which combine up to 512 Mbit LPSDRAM with a 256 Mbit, 512 Mbit or 1 Gbit NAND Flash memory. This combination of LPSDRAM and NAND Flash can result in up to 1 Gbit of memory. Features ■ Multi-Chip Packages – 1 | STMICROELECTRONICS 意法半导体 |   | |
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP Summary description The NAND256-M, NAND512-M and NAND01G-M are Multi-Chip Packages which combine up to 512 Mbit LPSDRAM with a 256 Mbit, 512 Mbit or 1 Gbit NAND Flash memory. This combination of LPSDRAM and NAND Flash can result in up to 1 Gbit of memory. Features ■ Multi-Chip Packages – 1 | STMICROELECTRONICS 意法半导体 | |
NAND01GR3M2BZC5E产品属性
- 类型
描述
- 型号
NAND01GR3M2BZC5E
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
256/512Mb/1Gb(x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories + 256/512Mb(x16/x32, 1.8V) LPSDRAM, MCP
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SST |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
ST/意法 |
2450+ |
TSSOP48 |
6540 |
只做原厂原装正品现货或订货!终端工厂可以申请样品! |
|||
ST |
24+ |
TSSOP48 |
8000 |
新到现货，只做全新原装正品 |
|||
ST/意法 |
24+ |
TSOP48 |
880000 |
明嘉莱只做原装正品现货 |
|||
NUMONYX |
23+ |
BGA |
50000 |
只做原装正品 |
|||
ST |
25+23+ |
TSOP48 |
35914 |
绝对原装正品全新进口深圳现货 |
|||
ST |
23+ |
BGA |
3000 |
原装正品假一罚百!可开增票! |
|||
STM |
23+ |
65480 |
|||||
ST |
22+ |
BGA |
12245 |
现货,原厂原装假一罚十! |
|||
ST |
23+ |
BGA |
6000 |
专业配单保证原装正品假一罚十 |
NAND01GR3M2BZC5E规格书下载地址
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DdatasheetPDF页码索引
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