丝印代码：N1N20；N-channel 200 V, 1.2 Ω, 1 A, SOT-223 MESH OVERLAY™ Power MOSFET

Description This device is an N-channel Power MOSFET developed using the latest high voltage MESH OVERLAY™ process. The new patented STrip layout coupled with the company’s proprietary edge termination structure, makes it suitable in converters for lighting applications. Features ■ 100 a

N-channel 200 V, 1.2 Ω, 1 A, SOT-223 MESH OVERLAY™ Power MOSFET

Description This device is an N-channel Power MOSFET developed using the latest high voltage MESH OVERLAY™ process. The new patented STrip layout coupled with the company’s proprietary edge termination structure, makes it suitable in converters for lighting applications. Features ■ 100 a

on-chip resistor NPN silicon epitaxial transistor For mid-speed switching

The CE1N2R is a transistor of on-chip high hFE resistor incorporating dumper diode in collector to emitter and zener diode in collector to base as protect elements. This transistor is ideal for actuator drives of OA equipments and electric equipments. FEATURES • On-chip zener diode for surge vol

on-chip resistor NPN silicon epitaxial transistor For mid-speed switching

FEATURES • On-chip zener diode for surge voltage absorption • On-chip bias resistor: R1 = 680 Ω, R2 = 10 kΩ • Low power consumption during driving: VOL = 0.3 V MAX.@V1 = 5.0 V, IC = 0.5 A • On-chip dumper diode for reverse cable

High Frequency Use High-Q (Non Magnetic Core) QF, QE

■ Features Capable of being Re-fl ow or fl ow soldered. Unique Ceramic Core/Laser-cut Technology. Non polarity product. High self resonance frequency. Good for mounting. RoHS compliant ■ Recommended Applications RF circuitry for cellular phones and wireless communication equipment

chip fuse

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Fixed Inductors (Chip Inductors)

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