型号 功能描述 生产厂家 企业 LOGO 操作
STN1N20

N - CHANNEL 200V - 1.2 ohm - 1A - SOT-223 POWER MOS TRANSISTOR

N - CHANNEL 200V - 1.2 Ω - 1A - SOT-223 POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 1.2 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ SOT-223 CAN BE WAVE OR REFLOW SOLDERED ■ AVAILABLEIN TAPE AND REEL ON REQUEST ■ 150 °C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HARD DI

STMICROELECTRONICS

意法半导体

STN1N20

丝印代码:N1N20;N-channel 200 V, 1.2 Ω, 1 A, SOT-223 MESH OVERLAY™ Power MOSFET

Description This device is an N-channel Power MOSFET developed using the latest high voltage MESH OVERLAY™ process. The new patented STrip layout coupled with the company’s proprietary edge termination structure, makes it suitable in converters for lighting applications. Features ■ 100 a

STMICROELECTRONICS

意法半导体

STN1N20

N - CHANNEL 200V - 1.2 ohm - 1A - SOT-223 POWER MOS TRANSISTOR

STMICROELECTRONICS

意法半导体

N-channel 200 V, 1.2 Ω, 1 A, SOT-223 MESH OVERLAY™ Power MOSFET

Description This device is an N-channel Power MOSFET developed using the latest high voltage MESH OVERLAY™ process. The new patented STrip layout coupled with the company’s proprietary edge termination structure, makes it suitable in converters for lighting applications. Features ■ 100 a

STMICROELECTRONICS

意法半导体

General Purpose Rectifiers(200V 1A)

FEATURES ● High voltage ● High reliability with superior moisture resistance ● 5 mm pitch mounting applicable APPLICATION ● Conventional Rectification ● Power source(Power Supply) ● Home Appliances, Office Equipment ● Telecommunication, Factory Automation

SHINDENGEN

1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive

INTERSIL

N-Channel Logic Level Power Field-Effect Transistors (L2 FET)

The RFL1N18L and RFL1N20L and the RFP2N18L and RFP2N20L are n-channel enhancement-mode silicon-gate power, field-effect transistors specifically designed for use with logic level (5 volt) driving sources In applications such as programmable controllers, automotive switching, and solenoid drivers.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-Channel Logic Level Power Field-Effect Transistors (L2 FET)

文件:92.71 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

STN1N20产品属性

  • 类型

    描述

  • 型号

    STN1N20

  • 功能描述

    MOSFET N-Ch 200 Volt 1 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-3-14 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
STMicroelectronics
25+
N/A
21000
正规渠道,免费送样。支持账期,BOM一站式配齐
STMicroelectronics
25+
N/A
21000
正规渠道,免费送样。支持账期,BOM一站式配齐
ST/意法
21+
SOT-223-3
5000
百域芯优势 实单必成 可开13点增值税
ST/意法
2450+
SOT-223-3
9850
只做原厂原装正品现货或订货假一赔十!
ST
25+23+
SOT-223
16554
绝对原装正品全新进口深圳现货
ST
25+
SOT-223
4500
全新原装、诚信经营、公司现货销售!
ST/意法
2025+
SOT-223
5000
原装进口,免费送样品!
ST
22+
TO2614 TO261AA
9000
原厂渠道,现货配单
ST
2025+
SOT-223
5425
全新原厂原装产品、公司现货销售
ST
17+
SOT-223
6200

STN1N20数据表相关新闻