Spindle Position Displays

文件：453.93 Kbytes Page：4 Pages

Polyurethane Adhesive-Back Bumpers

文件：147.88 Kbytes Page：1 Pages

High-Performance, Feature-Rich Single-Port 400GbE PCIe 5.0 x16 OCP 3.0 Ethernet Adapter

Based on Broadcom’s scalable 400G Ethernet controller architecture, the N1400GD 1x400G OCP 3.0 adapter is designed to build highly scalable, feature-rich networking solutions in servers for AI/ML, cloud, high-performance computing and storage applications.\nThe N1400GD 1x400G OCP 3.0 adapter builds • Standards-compliant 400G PCIe 5.0 QSFP112-DD OCP 3.0 adapter with line-rate, full-duplex throughput\n• High speed SerDes capable of 100/50G PAM4 and 25G NRZ\n• Optimized performance with StrataXGSⓇ and StrataDNX™ switches\n• Peer memory direct for low-latency inter-GPU communication\n• Industry's ;

Femto/Picoammeter and Electrometer/High Resistance Meter

B2980A Series Key Features –– 0.01 fA (10-17 A) minimum measurement resolution and 2 pA to 20 mA current –– measurement ranges with 6.5 digits resolution ––

Femto/Picoammeter and Electrometer/High Resistance Meter

B2980A Series Key Features –– 0.01 fA (10-17 A) minimum measurement resolution and 2 pA to 20 mA current –– measurement ranges with 6.5 digits resolution ––

Spindle Position Displays

文件：453.93 Kbytes Page：4 Pages

Spindle Position Displays

文件：453.93 Kbytes Page：4 Pages

中功率晶体管

N140BGE-E53

14.0??(14.0??diagonal) TFT Liquid Crystal Display module with LED Backlight unit and 30 pins eDP interface.

文件：4.41874 Mbytes Page：44 Pages

14.0 TFT Liquid Crystal Display module with LED Backlight unit and 40 pins LVDS interface.

文件：2.71521 Mbytes Page：35 Pages

14.0??(14.0??diagonal) TFT Liquid Crystal Display module

文件：1.36621 Mbytes Page：34 Pages

N140HGE-EAA is a 14.0??TFT Liquid Crystal Display module with LED Backlight unit and 30 pins eDP interface

文件：3.85487 Mbytes Page：44 Pages

N140HGE-EAA is a 14.0??TFT Liquid Crystal Display module with LED Backlight unit and 30 pins eDP interface

文件：3.85487 Mbytes Page：44 Pages

Plastic Medium Power Silicon PNP Transistor

1.5 AMPERE POWER TRANSISTORS PNP SILICON 45, 60, 80 VOLTS 10 WATTS . . . designedfor use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE= 40 (Min) @ IC= 0.15 Adc • BD 136, 138, 140 are complementary with BD 135, 137, 139

ULTRAFAST RECTIFIERS 1.0 AMPERE 200-400-600 VOLTS

SWITCHMODE™ Power Rectifiers . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 25, 50 and 75 Nanosecond Recovery Times • 175°C Operating Junction Temperature • Low Forward Voltage

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und

POWER TRANSISTORS(10A,60-100V,125W)

POWER TRANSISTORS(10A,60-100V,80W)

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for general-purpose amplifier and low speed switching applications. 10 AMPERE DARLINGTIOON COM:EMEMTARY SILICON POWER TRANSISTORS 60 - 100 VOLTS 80 WATTS TIP140T,TIP141T,TIP142T -->NPN TIP145T,TIP146T,TIP147T ---> PNP