MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The N0300N is a switching device which can be driven directly by a 4.5 V power source. The device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 4.5 V drive

Power MOSFETs

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The N0300N is a switching device which can be driven directly by a 4.5 V power source. The device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 4.5 V drive

MOS FIELD EFFECT TRANSISTOR

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N-Channel Enhancement-Mode Vertical DMOS Power FETs?

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedanc

N-Channel Enhancement-Mode Vertical DMOS Power FETs?

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedanc

TMOS FET Transistor

TMOS FET Transistor N–Channel — Enhancement

Silicon planar type

文件：49.05 Kbytes Page：4 Pages

Silicon PIN Photodiodes

文件：103.53 Kbytes Page：4 Pages