7-port 2.5G Ethernet Switch, Unmanaged

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 5A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 52mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

N-channel Enhancement Mode Power MOSFET

Features  VDS= 150V, ID= 50 A RDS(ON)

N-Channel PowerTrench짰 MOSFET 150 V, 27 A, 52 m

文件：178.9 Kbytes Page：6 Pages

Max rDS(on) = 51 m廓 at VGS = 10 V, ID = 4.6 A

文件：268.27 Kbytes Page：7 Pages

N-Channel Power Trench짰 MOSFET 150 V, 4.5 A, 55 m廓

文件：263.73 Kbytes Page：6 Pages