1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY

GENERAL DESCRIPTION The MX29F100T/B is a 1-mega bit Flash memory organized as 131,072 bytes or 65,536 words. MXICs Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The MX29F100T/B is packaged in 44-pin SOP and 48-pin TSOP. It is designed to b

1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY

1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY

GENERAL DESCRIPTION The MX29F100T/B is a 1-mega bit Flash memory organized as 131,072 bytes or 65,536 words. MXICs Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The MX29F100T/B is packaged in 44-pin SOP and 48-pin TSOP. It is designed to b

1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY

GENERAL DESCRIPTION The MX29F100T/B is a 1-mega bit Flash memory organized as 131,072 bytes or 65,536 words. MXICs Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The MX29F100T/B is packaged in 44-pin SOP and 48-pin TSOP. It is designed to b

1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY

GENERAL DESCRIPTION The MX29F100T/B is a 1-mega bit Flash memory organized as 131,072 bytes or 65,536 words. MXICs Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The MX29F100T/B is packaged in 44-pin SOP and 48-pin TSOP. It is designed to b

1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY

GENERAL DESCRIPTION The MX29F100T/B is a 1-mega bit Flash memory organized as 131,072 bytes or 65,536 words. MXICs Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The MX29F100T/B is packaged in 44-pin SOP and 48-pin TSOP. It is designed to b

1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY

GENERAL DESCRIPTION The MX29F100T/B is a 1-mega bit Flash memory organized as 131,072 bytes or 65,536 words. MXICs Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The MX29F100T/B is packaged in 44-pin SOP and 48-pin TSOP. It is designed to b

1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY

GENERAL DESCRIPTION The MX29F100T/B is a 1-mega bit Flash memory organized as 131,072 bytes or 65,536 words. MXICs Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The MX29F100T/B is packaged in 44-pin SOP and 48-pin TSOP. It is designed to b

1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY

GENERAL DESCRIPTION The MX29F100T/B is a 1-mega bit Flash memory organized as 131,072 bytes or 65,536 words. MXICs Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The MX29F100T/B is packaged in 44-pin SOP and 48-pin TSOP. It is designed to b

1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY

GENERAL DESCRIPTION The MX29F100T/B is a 1-mega bit Flash memory organized as 131,072 bytes or 65,536 words. MXICs Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The MX29F100T/B is packaged in 44-pin SOP and 48-pin TSOP. It is designed to b

1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY

GENERAL DESCRIPTION The MX29F100T/B is a 1-mega bit Flash memory organized as 131,072 bytes or 65,536 words. MXICs Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The MX29F100T/B is packaged in 44-pin SOP and 48-pin TSOP. It is designed to b

1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY

GENERAL DESCRIPTION The MX29F100T/B is a 1-mega bit Flash memory organized as 131,072 bytes or 65,536 words. MXICs Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The MX29F100T/B is packaged in 44-pin SOP and 48-pin TSOP. It is designed to b

1 Megabit (128 K x 8-bit/64 K x 16-bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory

GENERAL DESCRIPTION The Am29F100 is a 1 Mbit, 5.0 Volt-only Flash memory organized as 131,072 bytes or 65,536 words. The Am29F100 is offered in 44-pin SO and 48-pin TSOP packages. Word-wide data appears on DQ0-DQ15; byte-wide data on DQ0-DQ7. The device is designed to be programmed in-system with

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 30A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.44Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory

DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de

1000V, 29A, 0.46廓 Max, trr ??70ns N-Channel FREDFET

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N-Channel FREDFET

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