1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY

GENERAL DESCRIPTION The MX29F100T/B is a 1-mega bit Flash memory organized as 131,072 bytes or 65,536 words. MXICs Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The MX29F100T/B is packaged in 44-pin SOP and 48-pin TSOP. It is designed to b

1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY

1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY

GENERAL DESCRIPTION The MX29F100T/B is a 1-mega bit Flash memory organized as 131,072 bytes or 65,536 words. MXICs Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The MX29F100T/B is packaged in 44-pin SOP and 48-pin TSOP. It is designed to b

1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY

GENERAL DESCRIPTION The MX29F100T/B is a 1-mega bit Flash memory organized as 131,072 bytes or 65,536 words. MXICs Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The MX29F100T/B is packaged in 44-pin SOP and 48-pin TSOP. It is designed to b

1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY

GENERAL DESCRIPTION The MX29F100T/B is a 1-mega bit Flash memory organized as 131,072 bytes or 65,536 words. MXICs Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The MX29F100T/B is packaged in 44-pin SOP and 48-pin TSOP. It is designed to b

1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY

GENERAL DESCRIPTION The MX29F100T/B is a 1-mega bit Flash memory organized as 131,072 bytes or 65,536 words. MXICs Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The MX29F100T/B is packaged in 44-pin SOP and 48-pin TSOP. It is designed to b

1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY

GENERAL DESCRIPTION The MX29F100T/B is a 1-mega bit Flash memory organized as 131,072 bytes or 65,536 words. MXICs Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The MX29F100T/B is packaged in 44-pin SOP and 48-pin TSOP. It is designed to b

1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY

GENERAL DESCRIPTION The MX29F100T/B is a 1-mega bit Flash memory organized as 131,072 bytes or 65,536 words. MXICs Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The MX29F100T/B is packaged in 44-pin SOP and 48-pin TSOP. It is designed to b

1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY

GENERAL DESCRIPTION The MX29F100T/B is a 1-mega bit Flash memory organized as 131,072 bytes or 65,536 words. MXICs Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The MX29F100T/B is packaged in 44-pin SOP and 48-pin TSOP. It is designed to b

1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY

GENERAL DESCRIPTION The MX29F100T/B is a 1-mega bit Flash memory organized as 131,072 bytes or 65,536 words. MXICs Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The MX29F100T/B is packaged in 44-pin SOP and 48-pin TSOP. It is designed to b

1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY

GENERAL DESCRIPTION The MX29F100T/B is a 1-mega bit Flash memory organized as 131,072 bytes or 65,536 words. MXICs Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The MX29F100T/B is packaged in 44-pin SOP and 48-pin TSOP. It is designed to b

1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY

GENERAL DESCRIPTION The MX29F100T/B is a 1-mega bit Flash memory organized as 131,072 bytes or 65,536 words. MXICs Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The MX29F100T/B is packaged in 44-pin SOP and 48-pin TSOP. It is designed to b

1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory

DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de

1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory

DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de

1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory

SUMMARY DESCRIPTION The M29F100B is a 1 Mbit (128Kb x8 or 64Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. T

1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory

DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de

1000V, 29A, 0.46廓 Max, trr ??70ns N-Channel FREDFET

文件：401.43 Kbytes Page：4 Pages