位置：首页 > IC中文资料第40页 > M29F100
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
M29F100 | 1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 |   | |
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | |
M29F100产品属性
- 类型
描述
- 型号
M29F100
- 功能描述
闪存 128Kx8 or 64Kx16 70n
- RoHS
否
- 制造商
ON Semiconductor
- 数据总线宽度
1 bit
- 存储类型
Flash
- 存储容量
2 MB
- 结构
256 K x 8
- 接口类型
SPI
- 电源电压-最大
3.6 V
- 电源电压-最小
2.3 V
- 最大工作电流
15 mA
- 工作温度
- 40 C to + 85 C
- 安装风格
SMD/SMT
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
23+ |
SOP44 |
7685 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
ST |
1430+ |
SSOP |
5800 |
全新原装,公司大量现货供应,绝对正品 |
|||
ST |
2447 |
SOP |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
ST/意法 |
23+ |
tsop |
50000 |
全新原装正品现货,支持订货 |
|||
st |
2026+ |
tsop |
13238 |
只做原厂原装,认准宝芯创配单专家 |
|||
24+ |
3000 |
公司存货 |
|||||
ST/意法 |
24+ |
SOP44 |
39197 |
郑重承诺只做原装进口现货 |
|||
ST |
20+ |
SOP44W |
2960 |
诚信交易大量库存现货 |
|||
MAXIC |
23+24 |
SOIC |
27960 |
原装现货.优势热卖.终端BOM表可配单 |
|||
st |
2021+ |
tsop |
9450 |
原装现货。 |
M29F100规格书下载地址
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- M29F080A70N1
- M29F080A120N1
- M29F04B90N6T
- M29F04B90N6F
- M29F04B90N6E
- M29F040
- M29F010
- M29F002
- M2954
- M2951
- M2950
- M293B1
- M293010
- M29150B
- M29150A
- M2904
- M28W800
- M28W640
- M28ST-D
- M28ST-C
- M28ST-B
- M28ST
- M28S-D
- M28S-C
- M28S-B
M29F100数据表相关新闻
M28W160ECB70ZB6 ST/Micron
www.hfxcom.com.
2021-11-11M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123
M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123
2019-12-29M29W128GL70ZS6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18M28W320FCT70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18M29W128GH70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18M29W128GL70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18
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