位置：首页 > IC中文资料第40页 > M29F100
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
M29F100 | 1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 |  |   |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | |
M29F100产品属性
- 类型
描述
- 型号
M29F100
- 功能描述
闪存 128Kx8 or 64Kx16 70n
- RoHS
否
- 制造商
ON Semiconductor
- 数据总线宽度
1 bit
- 存储类型
Flash
- 存储容量
2 MB
- 结构
256 K x 8
- 接口类型
SPI
- 电源电压-最大
3.6 V
- 电源电压-最小
2.3 V
- 最大工作电流
15 mA
- 工作温度
- 40 C to + 85 C
- 安装风格
SMD/SMT
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
18 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ST/意法 |
24+ |
SOP |
880000 |
明嘉莱只做原装正品现货 |
|||
ST |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
STMICROELECT |
05+ |
原厂原装 |
8190 |
只做全新原装真实现货供应 |
|||
ST |
2016+ |
SOP44P |
6523 |
只做原装正品现货!或订货! |
|||
st |
0935+ |
tsop |
13238 |
只做原厂原装,认准宝芯创配单专家 |
|||
st |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
|||||
ST |
24+ |
SOP44W |
3629 |
原装优势!房间现货!欢迎来电! |
|||
ST |
23+ |
SOP |
8795 |
||||
ST |
98+ |
/ |
3 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
M29F100芯片相关品牌
M29F100规格书下载地址
M29F100参数引脚图相关
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- M29F080A70N1
- M29F080A120N1
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- M29F04B90N6F
- M29F04B90N6E
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- M29F010
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- M293010
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- M29150A
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- M28ST-D
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M29F100数据表相关新闻
M28W160ECB70ZB6 ST/Micron
www.hfxcom.com.
2021-11-11M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123
M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123
2019-12-29M29W128GL70ZS6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司0755-8272566018128853661（微信75056055）QQ：782954141
2019-6-18M28W320FCT70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司0755-8272566018128853661（微信75056055）QQ：782954141
2019-6-18M29W128GH70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司0755-8272566018128853661（微信75056055）QQ：782954141
2019-6-18M29W128GL70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司0755-8272566018128853661（微信75056055）QQ：782954141
2019-6-18
DdatasheetPDF页码索引
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