GENERAL DESCRIPTION

The MX29F100T/B is a 1-mega bit Flash memory organized as 131,072 bytes or 65,536 words. MXICs Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The MX29F100T/B is packaged in 44-pin SOP and 48-pin TSOP. It is designed to be reprogrammed and erased in-system or in-standard EPROM programmers.

FEATURES

• 5V±10 for read, erase and write operation

• 131072x8/ 65536x16 switchable

• Fast access time:55/70/90/120ns

• Low power consumption

- 40mA maximum active current(5MHz)

- 1uA typical standby current

• Command register architecture

- Byte/ Word Programming (7us/ 12us typical)

- Erase (16K-Bytex1, 8K-Bytex2, 32K-Bytex1, and 64K-Byte x1)

• Auto Erase (chip) and Auto Program

- Automatically erase any combination of sectors or with Erase Suspend capability.

- Automatically program and verify data at specified address

• Status Reply

- Data polling & Toggle bit for detection of program and erase cycle completion.

• Compatibility with JEDEC standard

- Pinout and software compatible with single-power supply Flash

- Superior inadvertent write protection

• Sector protection

- Hardware method to disable any combination of sectors from program or erase operations

- Sector protect/unprotect for 5V only system or 5V/ 12V system

• 100,000 minimum erase/program cycles

• Latch-up protected to 100mA from -1 to VCC+1V

• Boot Code Sector Architecture

- T = Top Boot Sector

- B = Bottom Boot Sector

• Low VCC write inhibit is equal to or less than 3.2V

• Package type:

- 44-pin SOP

- 48-pin TSOP

• Ready/Busy pin(RY/BY)

- Provides a hardware method or detecting program or erase cycle completion

• Erase suspend/ Erase Resume

- Suspend an erase operation to read data from, or program data to a sector that is not being erased, then resume the erase operation.

• Hardware RESET pin

- Hardware method of resetting the device to reading the device to reading array data.

• 20 years data retention