位置：首页 > IC中文资料第40页 > M29F100B
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
M29F100B | 1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 |   | |
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | | ||
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory DESCRIPTION The M29F100 is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-Byteor Wordby-Word basis using only a single 5V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The de | STMICROELECTRONICS 意法半导体 | |
M29F100B产品属性
- 类型
描述
- 型号
M29F100B
- 功能描述
闪存 128Kx8 or 64Kx16 70n
- RoHS
否
- 制造商
ON Semiconductor
- 数据总线宽度
1 bit
- 存储类型
Flash
- 存储容量
2 MB
- 结构
256 K x 8
- 接口类型
SPI
- 电源电压-最大
3.6 V
- 电源电压-最小
2.3 V
- 最大工作电流
15 mA
- 工作温度
- 40 C to + 85 C
- 安装风格
SMD/SMT
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
22+ |
tsop |
20000 |
公司只做原装 品质保障 |
|||
ST |
25+ |
QFP |
3200 |
全新原装、诚信经营、公司现货销售! |
|||
st |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
|||||
STMICROELECT |
05+ |
原厂原装 |
8190 |
只做全新原装真实现货供应 |
|||
ST |
25+ |
3 |
公司优势库存 热卖中!! |
||||
STM |
0045+ |
SOP |
224 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
STM |
25+ |
SOP |
240 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
ST |
22+ |
SO48 |
12245 |
现货,原厂原装假一罚十! |
|||
ST/意法 |
2450+ |
SOP44P |
6540 |
只做原厂原装正品现货或订货!终端工厂可以申请样品! |
|||
ST |
26+ |
SOP |
8795 |
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订 |
M29F100B规格书下载地址
M29F100B参数引脚图相关
- MP4
- MP3
- mos晶体管
- mos管
- MOSFET
- molex连接器
- mega16
- MCU
- mc34063
- mb881
- mb402
- max7219
- max706s
- max485esa
- max485csa
- max3232cse
- max232cse
- max232
- m628
- m358
- M2D160
- M2BJ-BH
- M2BJ-B
- M2BC_15
- M2B_15
- M2AS1
- M2AMS2
- M2AMS
- M2ADS
- M2AC_15
- M29W400
- M29W160
- M29W102
- M29W040
- M29W022
- M29W004
- M29F512
- M29F400
- M29F200
- M29F160FB5AN6F2 TR
- M29F160FB5AN6F2
- M29F160FB5AN6E2
- M29F160FB55N3F2 TR
- M29F160FB55N3F2
- M29F160FB55N3E2
- M29F160BT70N1
- M29F160
- M29F102BB70N1
- M29F102BB45N1
- M29F102BB-45K1
- M29F102BB45K1
- M29F102BB35N1
- M29F102BB35K1
- M29F102B45K1
- M29F100T-90M1
- M29F100BT90M1
- M29F100BT70M1
- M29F100BB90N1
- M29F100BB90M1
- M29F100BB70M1
- M29F100
- M29F080D90N1T
- M29F080D90N1
- M29F080D90M1
- M29F080D70N6E
- M29F080D70N6
- M29F080D70N1
- M29F080D70M6
- M29F080D70M1
- M29F080D55N6
- M29F080A90N6
- M29F080A90N1T
- M29F080A90N1
- M29F080A90M6
- M29F080A90M1
- M29F080A70N1T
- M29F080A70N1
- M29F080A120N1
- M29F04B90N6T
- M29F04B90N6F
- M29F04B90N6E
- M29F040
- M29F010
- M29F002
- M2954
- M2951
- M2950
- M293B1
- M293010
- M29150B
- M29150A
- M2904
- M28W800
- M28W640
- M28ST-D
- M28ST-C
- M28ST-B
- M28ST
- M28S-D
- M28S-C
M29F100B数据表相关新闻
M28W160ECB70ZB6 ST/Micron
www.hfxcom.com.
2021-11-11M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123
M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123
2019-12-29M29W128GL70ZS6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18M28W320FCT70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18M29W128GH70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18M29W128GL70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司 0755-82725660 18128853661（微信75056055） QQ：782954141
2019-6-18
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
- P108
- P109
