位置：首页 > IC中文资料第40页 > M29F100B
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
M29F100B | 1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 |  |   |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | |
M29F100B产品属性
- 类型
描述
- 型号
M29F100B
- 功能描述
闪存 128Kx8 or 64Kx16 70n
- RoHS
否
- 制造商
ON Semiconductor
- 数据总线宽度
1 bit
- 存储类型
Flash
- 存储容量
2 MB
- 结构
256 K x 8
- 接口类型
SPI
- 电源电压-最大
3.6 V
- 电源电压-最小
2.3 V
- 最大工作电流
15 mA
- 工作温度
- 40 C to + 85 C
- 安装风格
SMD/SMT
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
STM |
2020+ |
SOP |
240 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
ST |
2023+ |
3000 |
进口原装现货 |
||||
ST |
25+ |
QFP |
3200 |
全新原装、诚信经营、公司现货销售! |
|||
ST |
22+ |
SO48 |
12245 |
现货,原厂原装假一罚十! |
|||
ST |
24+ |
8000 |
原装现货,特价销售 |
||||
ST/意法 |
23+ |
TSOP |
7685 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
ST |
2447 |
SOP |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
ST/意法 |
23+ |
tsop |
50000 |
全新原装正品现货,支持订货 |
|||
ST |
25+23+ |
TSSOP |
23977 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
ST |
23+ |
SOP |
8795 |
M29F100B芯片相关品牌
M29F100B规格书下载地址
M29F100B参数引脚图相关
- MP4
- MP3
- mos晶体管
- mos管
- MOSFET
- molex连接器
- mega16
- MCU
- mc34063
- mb881
- mb402
- max7219
- max706s
- max485esa
- max485csa
- max3232cse
- max232cse
- max232
- m628
- m358
- M2D160
- M2BJ-BH
- M2BJ-B
- M2BC_15
- M2B_15
- M2AS1
- M2AMS2
- M2AMS
- M2ADS
- M2AC_15
- M29W400
- M29W160
- M29W102
- M29W040
- M29W022
- M29W004
- M29F512
- M29F400
- M29F200
- M29F160FB5AN6F2 TR
- M29F160FB5AN6F2
- M29F160FB5AN6E2
- M29F160FB55N3F2 TR
- M29F160FB55N3F2
- M29F160FB55N3E2
- M29F160BT70N1
- M29F160
- M29F102BB70N1
- M29F102BB45N1
- M29F102BB-45K1
- M29F102BB45K1
- M29F102BB35N1
- M29F102BB35K1
- M29F102B45K1
- M29F100T-90M1
- M29F100BT90M1
- M29F100BT70M1
- M29F100BB90N1
- M29F100BB90M1
- M29F100BB70M1
- M29F100
- M29F080D90N1T
- M29F080D90N1
- M29F080D90M1
- M29F080D70N6E
- M29F080D70N6
- M29F080D70N1
- M29F080D70M6
- M29F080D70M1
- M29F080D55N6
- M29F080A90N6
- M29F080A90N1T
- M29F080A90N1
- M29F080A90M6
- M29F080A90M1
- M29F080A70N1T
- M29F080A70N1
- M29F080A120N1
- M29F04B90N6T
- M29F04B90N6F
- M29F04B90N6E
- M29F040
- M29F010
- M29F002
- M2954
- M2951
- M2950
- M293B1
- M293010
- M29150B
- M29150A
- M2904
- M28W800
- M28W640
- M28ST-D
- M28ST-C
- M28ST-B
- M28ST
- M28S-D
- M28S-C
M29F100B数据表相关新闻
M28W160ECB70ZB6 ST/Micron
www.hfxcom.com.
2021-11-11M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123
M28C64-A256，M28C64C-15M6，M28C64C-20M1，M28C64X-15M1，M28F101-100K1，M28LV16-25M6，M28LV17-25M6，M28LV64C-20M6，M29F102B-70K1，M34116B1，M74HC00，M74ACT74，M74ACT257，M74HC163，M74HC04，M74HC123
2019-12-29M29W128GL70ZS6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司0755-8272566018128853661（微信75056055）QQ：782954141
2019-6-18M28W320FCT70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司0755-8272566018128853661（微信75056055）QQ：782954141
2019-6-18M29W128GH70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司0755-8272566018128853661（微信75056055）QQ：782954141
2019-6-18M29W128GL70N6E顺德利科技正品原装进口稳定的货源优势的价格
深圳市顺德利科技有限公司0755-8272566018128853661（微信75056055）QQ：782954141
2019-6-18
DdatasheetPDF页码索引
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