RF Power Field Effect Transistor

450-1500 MHz, 10 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications. • Typical Two-Tone Performance @ 960 MHz, VDD = 28

RF Power Field Effect Transistor

450-1500 MHz, 10 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications. • Typical Two-Tone Performance @ 960 MHz, VDD = 28

RF Power Field Effect Transistor

450-1500 MHz, 10 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications. • Typical Two-Tone Performance @ 960 MHz, VDD = 28

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs

450-1500 MHz, 10 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications. • Typical Two-Tone Performance @ 960 MHz, VDD = 28

RF Power Field Effect Transistors

RF Power Field Effect Transistor

450-1500 MHz, 10 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications. • Typical Two-Tone Performance @ 960 MHz, VDD = 28

RF Power Field Effect Transistors

RF Power Field Effect Transistors

RF Power Field Effect Transistor

450-1500 MHz, 10 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications. • Typical Two-Tone Performance @ 960 MHz, VDD = 28

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs

450-1500 MHz, 10 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications. • Typical Two-Tone Performance @ 960 MHz, VDD = 28

Lateral N-Channel Broadband RF Power MOSFET, 450-1500 MHz, 10 W, 28 V

封装/外壳：TO-270BA 包装：托盘 描述：RF MOSFET LDMOS 28V TO270-2 GULL 分立半导体产品 晶体管 - FET，MOSFET - 射频

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

文件：730.91 Kbytes Page：20 Pages

封装/外壳：TO-270-2 包装：卷带（TR） 描述：FET RF 68V 960MHZ TO-270-2 分立半导体产品 晶体管 - FET，MOSFET - 射频

450-1500 MHz，10 W，28 V宽带射频功率LDMOS

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

文件：730.91 Kbytes Page：20 Pages

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

文件：730.91 Kbytes Page：20 Pages