Lateral N-Channel Broadband RF Power MOSFET, 450-1500 MHz, 10 W, 28 V

RF Power Field Effect Transistor

450-1500 MHz, 10 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications. • Typical Two-Tone Performance @ 960 MHz, VDD = 28

RF Power Field Effect Transistor

450-1500 MHz, 10 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications. • Typical Two-Tone Performance @ 960 MHz, VDD = 28

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs

450-1500 MHz, 10 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications. • Typical Two-Tone Performance @ 960 MHz, VDD = 28

RF Power Field Effect Transistors

封装/外壳：TO-270BA 包装：托盘 描述：RF MOSFET LDMOS 28V TO270-2 GULL 分立半导体产品 晶体管 - FET，MOSFET - 射频

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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RF Power Field Effect Transistors