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MURS120T3价格
参考价格：￥0.3129
型号：MURS120T3G 品牌：ON 备注：这里有MURS120T3多少钱，2025年最近7天走势，今日出价，今日竞价，MURS120T3批发/采购报价，MURS120T3行情走势销售排行榜，MURS120T3报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MURS120T3 | ULTRAFAST RECTIFIERS 1.0 AMPERE 200-600 VOLTS Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system. • Small Compact Surface Mountable Package with J–Bend Leads • | Motorola 摩托罗拉 |   | |
MURS120T3 | Surface Mount Ultrafast Power Rectifiers 文件：80.4 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | |
MURS120T3 | ULTRAFAST RECTIFIERS 1.0 AMPERE, 50??00 VOLTS 文件：60.88 Kbytes Page：5 Pages | ONSEMI 安森美半导体 | | |
MURS120T3 | Surface Mount Ultrafast Power Rectifiers 文件：114.12 Kbytes Page：5 Pages | ONSEMI 安森美半导体 | | |
MURS120T3 | ULTRAFAST RECTIFIERS 1.0 AMPERE 200–600 VOLTS | ETC 知名厂家 | ETC | |
Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system. Features •Small Compact Surface Mountable Package with J−Bend Leads •Rectangular Package for A | ONSEMI 安森美半导体 | | ||
Power Rectifier, Ultra-Fast Recovery, 1 A, 50-600 V Features • Small Compact Surface Mountable Package with J−Bend Leads • Rectangular Package for Automated Handling • High Temperature Glass Passivated Junction • Low Forward Voltage Drop (0.71 to 1.05 V Max @ 1.0 A, TJ = 150°C) • NRVUS and SURS8 Prefixes for Automotive and Other Applications | ONSEMI 安森美半导体 | | ||
ULTRAFAST RECTIFIERS 1.0 AMPERE, 50??00 VOLTS 文件：60.88 Kbytes Page：5 Pages | ONSEMI 安森美半导体 | | ||
Surface Mount Ultrafast Power Rectifiers 文件：114.12 Kbytes Page：5 Pages | ONSEMI 安森美半导体 | | ||
Surface Mount Ultrafast Power Rectifiers 文件：68.01 Kbytes Page：5 Pages | ONSEMI 安森美半导体 | | ||
Surface Mount Ultrafast Power Rectifiers 文件：114.12 Kbytes Page：5 Pages | ONSEMI 安森美半导体 | | ||
ULTRAFAST RECTIFIERS 1.0 AMPERE, 50??00 VOLTS 文件：60.88 Kbytes Page：5 Pages | ONSEMI 安森美半导体 | | ||
Surface Mount Ultrafast Power Rectifiers 文件：80.4 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
Surface Mount Ultrafast Power Rectifiers Diodes | JSMSEMI 杰盛微 | | ||
封装/外壳：DO-214AA，SMB 包装：管件 描述：DIODE GEN PURP 200V 1A SMB 分立半导体产品 二极管 - 整流器 - 单 | ONSEMI 安森美半导体 | | ||
封装/外壳：DO-214AA，SMB 包装：散装 描述：DIODE GEN PURPOSE 分立半导体产品 二极管 - 整流器 - 单 | ONSEMI 安森美半导体 | | ||
CHIP SCHOTTKY BARRIER DIODES FEATURES • Plastic package has Underwriters Laboratory FlammabilityClassification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. • For surface mounted applications. • Exceeds environmental standards of MIL-S-19500 / 228 • Low leakage current. | TAYCHIPST 泰迪斯电子 | | ||
Chip Schottky Barrier Diodes - Silicon epitaxial planer type Silicon epitaxial planer type Features • Plastic package has Underwriters Laboratory FlammabilityClassification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. • For surface mounted applications. • Exceeds environmental standards of MIL-S-19500 / 228 • Low leakage current. | FORMOSA 美丽微半导体 | | ||
Surface Mount Schottky Power Rectifier Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectif | ONSEMI 安森美半导体 | | ||
Surface Mount Schottky Power Rectifier Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectif | ONSEMI 安森美半导体 | | ||
Surface Mount Schottky Power Rectifier Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectif | ONSEMI 安森美半导体 | |
MURS120T3产品属性
- 类型
描述
- 型号
MURS120T3
- 功能描述
整流器 200V 1A Ultrafast
- RoHS
否
- 制造商
Vishay Semiconductors
- 产品
Standard Recovery Rectifiers
- 反向电压
100 V
- 恢复时间
1.2 us
- 正向连续电流
2 A
- 最大浪涌电流
35 A 反向电流
- IR
5 uA
- 安装风格
SMD/SMT
- 封装/箱体
DO-221AC
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON(安森美) |
24+ |
标准封装 |
15848 |
全新原装正品/价格优惠/质量保障 |
|||
ON/安森美 |
24+ |
SMB-2 |
33500 |
全新进口原装现货,假一罚十 |
|||
ONSEMI/安森美 |
23+ |
SMB |
4500 |
只做原装正品现货或订货假一赔十! |
|||
ON |
24+ |
SMB |
86500 |
全新原装现货/假一罚百! |
|||
ON Semiconductor Corporation |
25+ |
SMD |
918000 |
明嘉莱只做原装正品现货 |
|||
ON(安森美) |
24+ |
SMB |
13048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
ON/安森美 |
22+ |
SMB |
8000 |
原装正品现货假一罚十 |
|||
ON/安森美 |
21+ |
SMB-2 |
8080 |
只做原装,质量保证 |
|||
ON/安森美 |
24+ |
SMB |
10000 |
只做原装欢迎含税交易,假一赔十,放心购买 |
|||
ONSEMI |
25+ |
13586 |
全新原装!优势库存热卖中! |
MURS120T3规格书下载地址
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