Surface Mount Ultrafast Power Rectifiers

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ULTRAFAST RECTIFIERS 1 AMPERE, 100??00 VOLTS

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Surface Mount Ultrafast Power Rectifiers

Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system. Features • Small Compact Surface Mountable Package with J−Bend Leads • Rectangular Package for Aut

Power Rectifier, Ultra-Fast Recovery, 1 A, 100-200 V

Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system. Features • Small Compact Surface Mountable Package with J−Bend Leads • Rectangular Package for Autom

封装/外壳：DO-214AC，SMA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE GEN PURP 200V 2A SMA 分立半导体产品 二极管 - 整流器 - 单

Surface Mount Rectifiers

Surface Mount Ultrafast Power Rectifiers

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1.0 Ampere Surface Mount Type Ultra Fast Recovery Rectifier Diode

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ULTRAFAST RECTIFIERS 1 AMPERE, 100??00 VOLTS

文件：49.24 Kbytes Page：4 Pages

DIODE GEN PURPOSE

封装/外壳：DO-214AC，SMA 包装：散装 描述：DIODE GEN PURPOSE 分立半导体产品 二极管 - 整流器 - 单

Chip Schottky Barrier Diodes - Silicon epitaxial planer type

Silicon epitaxial planer type Features • Plastic package has Underwriters Laboratory FlammabilityClassification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. • For surface mounted applications. • Exceeds environmental standards of MIL-S-19500 / 228 • Low leakage current.

CHIP SCHOTTKY BARRIER DIODES

FEATURES • Plastic package has Underwriters Laboratory FlammabilityClassification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. • For surface mounted applications. • Exceeds environmental standards of MIL-S-19500 / 228 • Low leakage current.

Surface Mount Schottky Power Rectifier

Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectif

Surface Mount Schottky Power Rectifier

Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectif

Surface Mount Schottky Power Rectifier

Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectif