Surface Mount Ultrafast Power Rectifiers

Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system. Features •Small Compact Surface Mountable Package with J−Bend Leads •Rectangular Package for A

Power Rectifier, Ultra-Fast Recovery, 1 A, 50-600 V

Features • Small Compact Surface Mountable Package with J−Bend Leads • Rectangular Package for Automated Handling • High Temperature Glass Passivated Junction • Low Forward Voltage Drop (0.71 to 1.05 V Max @ 1.0 A, TJ = 150°C) • NRVUS and SURS8 Prefixes for Automotive and Other Applications

封装/外壳：DO-214AA，SMB 包装：管件 描述：DIODE GEN PURP 200V 1A SMB 分立半导体产品 二极管 - 整流器 - 单

Surface Mount Ultrafast Power Rectifiers Diodes

Surface Mount Ultrafast Power Rectifiers

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Surface Mount Ultrafast Power Rectifiers

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ULTRAFAST RECTIFIERS 1.0 AMPERE, 50??00 VOLTS

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Surface Mount Ultrafast Power Rectifiers

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CHIP SCHOTTKY BARRIER DIODES

FEATURES • Plastic package has Underwriters Laboratory FlammabilityClassification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. • For surface mounted applications. • Exceeds environmental standards of MIL-S-19500 / 228 • Low leakage current.

Chip Schottky Barrier Diodes - Silicon epitaxial planer type

Silicon epitaxial planer type Features • Plastic package has Underwriters Laboratory FlammabilityClassification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. • For surface mounted applications. • Exceeds environmental standards of MIL-S-19500 / 228 • Low leakage current.

Surface Mount Schottky Power Rectifier

Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectif

Surface Mount Schottky Power Rectifier

Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectif

Surface Mount Schottky Power Rectifier

Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectif