Super Fast Recovery Rectifiers

• High Surge Capability D-67 Package\n• Not ESD Sensitive;

封装/外壳：D-67 包装：散装 描述：DIODE GEN PURP 400V 100A D-67 分立半导体产品 二极管 - 整流器 - 单

Silicon Super Fast Recovery Diode

文件：352.01 Kbytes Page：3 Pages

Silicon Super Fast Recovery Diode

文件：650.67 Kbytes Page：3 Pages

Silicon Super Fast Recovery Diode

文件：650.67 Kbytes Page：3 Pages

封装/外壳：D-67 包装：散装 描述：DIODE GEN PURP 400V 100A D-67 分立半导体产品 二极管 - 整流器 - 单

Super Fast Recovery Rectifiers

Silicon Super Fast Recovery Diode

文件：650.67 Kbytes Page：3 Pages

Silicon Super Fast Recovery Diode

文件：352.01 Kbytes Page：3 Pages

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Identical Specific

SLOTTED SWITCH

INFRARED LED+PHOTO IC APPLICATIONS ● TIMING DETECTION FOR PRINTERS, TYPEWRITERS AND FACSIMILE

100 Amp Supre Fast Recovery Rectifier 50 to 600 Volts

Features • High Surge Capability • Low Leakage • Low Forward Voltage Drop • High Current Capability • Supre Fast switching for high efficiency

100 Amp Supre Fast Recovery Rectifier 50 to 600 Volts

Features • High Surge Capability • Low Leakage • Low Forward Voltage Drop • High Current Capability • Supre Fast switching for high efficiency

100 Amp Supre Fast Recovery Rectifier 50 to 600 Volts

Features • High Surge Capability • Low Leakage • Low Forward Voltage Drop • High Current Capability • Supre Fast switching for high efficiency