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MTP50价格
参考价格：￥14.0170
型号：MTP50P03HDLG 品牌：ON 备注：这里有MTP50多少钱，2025年最近7天走势，今日出价，今日竞价，MTP50批发/采购报价，MTP50行情走势销售排行榜，MTP50报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MTP50 | Glass Passivated Three-Phase Bridge Rectifier, 50A 文件：879.21 Kbytes Page：3 Pages | NELLSEMI 尼尔半导体 |   | |
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 50A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 25mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 50A@ TC=25℃ ·Drain Source Voltage -VDSS= 50V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 28mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
TMOS POWER FET 50 AMPERES 60 VOLTS RDS(on) = 0.028 OHM TMOS E-FET™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed fo | Motorola 摩托罗拉 | | ||
TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.032 OHM TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.032 OHM N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resis tance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and | Motorola 摩托罗拉 | | ||
TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHM TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHM N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 an | Motorola 摩托罗拉 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 50A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 25mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
TMOS POWER FET 50 AMPERES 60 VOLTS RDS(on) = 0.028 OHM TMOS E-FET™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed fo | Motorola 摩托罗拉 | | ||
TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHM TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHM N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 an | Motorola 摩托罗拉 | | ||
isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 42A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.028Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
TMOS V??Power Field Effect Transistor TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHM N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 an | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.032 OHM TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.032 OHM N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resis tance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and | Motorola 摩托罗拉 | | ||
TMOS POWER FET LOGIC LEVEL 50 AMPERES 30 VOLTS RDS(on) = 0.025 OHM HDTMOS E-FET Power Field Effect Transistor P–Channel Enhancement–Mode Silicon Gate This advanced high–cell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recover | Motorola 摩托罗拉 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 50A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 25mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
UL recognition file number E320098 文件：375.61 Kbytes Page：3 Pages | NELLSEMI 尼尔半导体 | | ||
Glass Passivated Triple-Phase Bridge Rectifier 文件：664.83 Kbytes Page：3 Pages | NELLSEMI 尼尔半导体 | | ||
Glass Passivated Triple-Phase Bridge Rectifier 文件：655.33 Kbytes Page：3 Pages | NELLSEMI 尼尔半导体 | | ||
Glass Passivated Triple-Phase Bridge Rectifier 文件：604.63 Kbytes Page：3 Pages | NELLSEMI 尼尔半导体 | | ||
Glass Passivated Triple-Phase Bridge Rectifier 文件：664.83 Kbytes Page：3 Pages | NELLSEMI 尼尔半导体 | | ||
Glass Passivated Three-Phase Bridge Rectifier 文件：602.65 Kbytes Page：3 Pages | NELLSEMI 尼尔半导体 | | ||
Glass Passivated Triple-Phase Bridge Rectifier 文件：655.33 Kbytes Page：3 Pages | NELLSEMI 尼尔半导体 | | ||
Glass Passivated Triple-Phase Bridge Rectifier 文件：604.63 Kbytes Page：3 Pages | NELLSEMI 尼尔半导体 | | ||
Glass Passivated Triple-Phase Bridge Rectifier 文件：664.83 Kbytes Page：3 Pages | NELLSEMI 尼尔半导体 | | ||
Glass Passivated Triple-Phase Bridge Rectifier 文件：655.33 Kbytes Page：3 Pages | NELLSEMI 尼尔半导体 | | ||
Glass Passivated Triple-Phase Bridge Rectifier 文件：604.63 Kbytes Page：3 Pages | NELLSEMI 尼尔半导体 | | ||
Glass Passivated Triple-Phase Bridge Rectifier 文件：664.83 Kbytes Page：3 Pages | NELLSEMI 尼尔半导体 | | ||
Glass Passivated Three-Phase Bridge Rectifier 文件：628.15 Kbytes Page：3 Pages | NELLSEMI 尼尔半导体 | | ||
Glass Passivated Three-Phase Bridge Rectifier 文件：602.65 Kbytes Page：3 Pages | NELLSEMI 尼尔半导体 | | ||
Glass Passivated Triple-Phase Bridge Rectifier 文件：655.33 Kbytes Page：3 Pages | NELLSEMI 尼尔半导体 | | ||
Glass Passivated Triple-Phase Bridge Rectifier 文件：604.63 Kbytes Page：3 Pages | NELLSEMI 尼尔半导体 | | ||
桥式整流 三相桥式整流 | NELLSEMI 尼尔半导体 | | ||
Glass Passivated Triple-Phase Bridge Rectifier 文件：664.83 Kbytes Page：3 Pages | NELLSEMI 尼尔半导体 | | ||
Glass Passivated Three-Phase Bridge Rectifier 文件：628.15 Kbytes Page：3 Pages | NELLSEMI 尼尔半导体 | | ||
Glass Passivated Three-Phase Bridge Rectifier 文件：602.65 Kbytes Page：3 Pages | NELLSEMI 尼尔半导体 | | ||
桥式整流 三相桥式整流(50A▽) | NELLSEMI 尼尔半导体 | | ||
桥式整流 三相桥式整流(50A▽) | NELLSEMI 尼尔半导体 | | ||
Glass Passivated Triple-Phase Bridge Rectifier 文件：655.33 Kbytes Page：3 Pages | NELLSEMI 尼尔半导体 | | ||
Glass Passivated Triple-Phase Bridge Rectifier 文件：604.63 Kbytes Page：3 Pages | NELLSEMI 尼尔半导体 | | ||
Glass Passivated Three-Phase Bridge Rectifier 文件：628.15 Kbytes Page：3 Pages | NELLSEMI 尼尔半导体 | | ||
Glass Passivated Three-Phase Bridge Rectifier 文件：628.15 Kbytes Page：3 Pages | NELLSEMI 尼尔半导体 | | ||
Three-Phase Bridge Rectifier, 50A 文件：825.62 Kbytes Page：3 Pages | NELLSEMI 尼尔半导体 | | ||
Glass Passivated Triple-Phase Bridge Rectifier 文件：664.83 Kbytes Page：3 Pages | NELLSEMI 尼尔半导体 | | ||
Glass Passivated Triple-Phase Bridge Rectifier, 50A 文件：699.58 Kbytes Page：3 Pages | NELLSEMI 尼尔半导体 | | ||
Glass Passivated Triple-Phase Bridge Rectifier 文件：664.83 Kbytes Page：3 Pages | NELLSEMI 尼尔半导体 | | ||
Three-Phase Bridge Rectifier, 50A 文件：922.73 Kbytes Page：3 Pages | NELLSEMI 尼尔半导体 | | ||
Glass Passivated Three-Phase Bridge Rectifier 文件：628.15 Kbytes Page：3 Pages | NELLSEMI 尼尔半导体 | | ||
Glass Passivated Three-Phase Bridge Rectifier 文件：602.65 Kbytes Page：3 Pages | NELLSEMI 尼尔半导体 | | ||
Glass Passivated Triple-Phase Bridge Rectifier 文件：655.33 Kbytes Page：3 Pages | NELLSEMI 尼尔半导体 | | ||
N-Channel 60-V (D-S) MOSFET 文件：979.64 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 60-V (D-S) MOSFET 文件：979.57 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 60-V (D-S) MOSFET 文件：979.47 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 60-V (D-S) MOSFET 文件：979.45 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
N?묬hannel Power MOSFET 文件：207.07 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
isc N-Channel MOSFET Transistor 文件：332.41 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
N?묬hannel Power MOSFET 文件：208.75 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
50A,60V Heatsink Planar N-Channel Power MOSFET 文件：1.13263 Mbytes Page：6 Pages | THINKISEMI 思祁半导体 | | ||
Power MOSFET 50 Amps, 30 Volts, Logic Level P-Channel TO-220 文件：91.41 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
Power MOSFET 50 Amps, 30 Volts, Logic Level P-Channel TO-220 文件：91.41 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
Three-Phase Bridge Rectifier, 50A 文件：929.67 Kbytes Page：3 Pages | NELLSEMI 尼尔半导体 | | ||
Glass Passivated Triple-Phase Bridge Rectifier 文件：604.63 Kbytes Page：3 Pages | NELLSEMI 尼尔半导体 | |
MTP50产品属性
- 类型
描述
- 型号
MTP50
- 制造商
NELLSEMI
- 制造商全称
Nell Semiconductor Co., Ltd
- 功能描述
Glass Passivated Three-Phase Bridge Rectifier, 50A
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
24+ |
NA/ |
10065 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ON |
20+ |
TO-220 |
65790 |
原装优势主营型号-可开原型号增税票 |
|||
MOTO |
2025+ |
TO220 |
3635 |
全新原厂原装产品、公司现货销售 |
|||
IR |
24+ |
TO 220 |
161577 |
明嘉莱只做原装正品现货 |
|||
ON |
11+ |
TO-220 |
380 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
MOT |
23+24 |
TO-220 |
29840 |
主营MOS管,二极.三极管,肖特基二极管.功率三极管 |
|||
ON(安森美) |
23+ |
17731 |
公司只做原装正品,假一赔十 |
||||
MOTOROLA/摩托罗拉 |
2450+ |
TO-220 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
ON |
23+ |
原厂原装 |
3 |
正规渠道,只有原装! |
|||
MOTOROLA/摩托罗拉 |
00+ |
TO-220 |
122 |
MTP50规格书下载地址
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类型 描述 选取全部项目 类别 电缆，电线 - 管理 电缆扎带 - 支座和附件 制造商 Panduit Corp 系列 MTP 零件状态 有源 类型 多开 安装类型 螺钉 - #6 大小/尺寸 4.25 长 x 0.50 宽 x 0.12 高（107.9mm x 12.7mm x 3.0mm） 配套使用产品/相关产品 M，I，S 束带 材料 尼龙 颜色 天然
2019-10-30
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