位置：首页 > IC中文资料第1385页 > MTP50N06V
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
MTP50N06V | TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHM TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHM N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 an | Motorola 摩托罗拉 |   | |
MTP50N06V | TMOS V??Power Field Effect Transistor TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHM N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 an | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | |
MTP50N06V | isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 42A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.028Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | |
MTP50N06V | isc N-Channel MOSFET Transistor 文件：332.41 Kbytes Page：2 Pages | ISC 无锡固电 | | |
MTP50N06V | N-Channel 60-V (D-S) MOSFET 文件：979.45 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | |
MTP50N06V | N?묬hannel Power MOSFET 文件：207.07 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | |
TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.032 OHM TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.032 OHM N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resis tance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and | Motorola 摩托罗拉 | | ||
N?묬hannel Power MOSFET 文件：208.75 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
50A,60V Heatsink Planar N-Channel Power MOSFET 文件：1.13263 Mbytes Page：6 Pages | THINKISEMI 思祁半导体 | | ||
50 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 50N06is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching mod | UTC 友顺 | | ||
50 Amps, 60 Volts N-CHANNEL POWER MOSFET 文件：330.9 Kbytes Page：8 Pages | UTC 友顺 | | ||
50A 60V N-channel Enhancement Mode Power MOSFET 文件：812.59 Kbytes Page：10 Pages | WXDH 东海半导体 | | ||
50A 60V N-channel Enhancement Mode Power MOSFET 文件：808.72 Kbytes Page：10 Pages | WXDH 东海半导体 | | ||
50A 60V N-channel Enhancement Mode Power MOSFET 文件：807.77 Kbytes Page：10 Pages | WXDH 东海半导体 | |
MTP50N06V产品属性
- 类型
描述
- 型号
MTP50N06V
- 功能描述
MOSFET DISC BY MFG 2/02
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON(安森美) |
23+ |
17731 |
公司只做原装正品,假一赔十 |
||||
ISC |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
|||
ON/安森美 |
2022+ |
TO-220 |
30000 |
进口原装现货供应,原装 假一罚十 |
|||
IR |
24+ |
TO-220 |
27500 |
原装正品,价格最低! |
|||
MOTOROLA |
23+ |
NA |
315 |
专做原装正品,假一罚百! |
|||
ON |
23+ |
TO-220 |
6893 |
||||
MTP50N06V |
15 |
15 |
|||||
ON |
24+ |
TO-220 |
16800 |
绝对原装进口现货 假一赔十 价格优势!? |
|||
24+ |
N/A |
5000 |
公司存货 |
||||
ON |
17+ |
TO-220 |
6200 |
MTP50N06V规格书下载地址
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类型 描述 选取全部项目 类别 电缆，电线 - 管理 电缆扎带 - 支座和附件 制造商 Panduit Corp 系列 MTP 零件状态 有源 类型 多开 安装类型 螺钉 - #6 大小/尺寸 4.25 长 x 0.50 宽 x 0.12 高（107.9mm x 12.7mm x 3.0mm） 配套使用产品/相关产品 M，I，S 束带 材料 尼龙 颜色 天然
2019-10-30
DdatasheetPDF页码索引
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