isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 3A@ TC=25℃ ·Drain Source Voltage -VDSS= 1000V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design a

isc N-Channel MOSFET Transistor

文件：304.9 Kbytes Page：2 Pages

TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM

N-Channel Enhancement MOSFET

Features  VDS=100V, ID=3A  RDS(ON)

N-Channel MOSFET uses advanced trench technology

文件：2.43704 Mbytes Page：4 Pages

N-Channel Enhancement Mode Power MOSFET

文件：3.18825 Mbytes Page：7 Pages

N-Channel Enhancement Mode Power MOSFET

文件：2.70066 Mbytes Page：7 Pages

N-Channel MOSFET

文件：362.46 Kbytes Page：4 Pages