位置:首页 > IC中文资料第1781页 > MTP20N06V

型号 功能描述 生产厂家 企业 LOGO 操作
MTP20N06V

TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM

TMOS V Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Ju

MOTOROLA

摩托罗拉

MTP20N06V

N?묬hannel Power MOSFET

文件:209.09 Kbytes Page:7 Pages

ONSEMI

安森美半导体

MTP20N06V

N−Channel Power MOSFET

ONSEMI

安森美半导体

TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM

TMOS V™ Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOSV is a new technologydesigned to achieve an on–resistancearea product about one–half that of standard MOSFETs. This newtechnology more than doubles the present cell density of our 50

MOTOROLA

摩托罗拉

TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.045 OHM

HDTMOS E-FET™ Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate This advanced HDTMOS power FET is designed to withstand highenergy in the avalancheand commutation modes. This new energy efficient design also offers a drain–to–source diode with

MOTOROLA

摩托罗拉

TMOS POWER FET LOGIC LEVEL 20 AMPERES 60 VOLTS RDS(on) = 0.045 OHM

HDTMOS E-FET™ Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate This advanced high–cell density HDTMOS E–FET is designed to with stand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–so

MOTOROLA

摩托罗拉

TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM

TMOS V™ Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOSV is a new technologydesigned to achieve an on–resistancearea product about one–half that of standard MOSFETs. This newtechnology more than doubles the present cell density of our 50

MOTOROLA

摩托罗拉

N-channel TrenchMOS transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Features ■ Very low on-state resistance ■ Fast switching. Applications ■ Switched mode power supplies ■ DC to DC converters.

PHILIPS

飞利浦

MTP20N06V产品属性

  • 类型

    描述

  • 型号

    MTP20N06V

  • 制造商

    Rochester Electronics LLC

  • 功能描述

    - Bulk

更新时间:2026-3-17 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
onsemi(安森美)
25+
-
18798
正规渠道,免费送样。支持账期,BOM一站式配齐
mot
24+
N/A
6980
原装现货,可开13%税票
ON
25+
TO-22
4500
全新原装、诚信经营、公司现货销售!
MOT
06+
TO-220
3000
原装
ON
26+
TO-220
6893
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订
ON
24+
N/A
3540
37850
23+
10
15442
原厂授权一级代理,专业海外优势订货,价格优势、品种
onsemi(安森美)
25+
-
18798
正规渠道,免费送样。支持账期,BOM一站式配齐
ON/安森美
2022+
TO-220
12888
原厂代理 终端免费提供样品
NEXPERIA/安世
23+
69820
终端可以免费供样,支持BOM配单!

MTP20N06V数据表相关新闻

  • MTP7508

    MTP7508 NELL三相整模块MTP10016 MTP7516

    2021-12-28
  • MTP4435BV8

    MTP4435BV8 MTP4435BV8-0-T6-G 原装正品现货 元器件一站式配单

    2021-12-28
  • MTP10-B7F55 代理库存

    原厂 原包装 绝无虚假 假一罚十

    2020-6-4
  • MTP10N08,MTP10N10,MTP10N10E,MTP10N10EL,MTP10N12,

    MTP10N08,MTP10N10,MTP10N10E,MTP10N10EL,MTP10N12,

    2020-3-12
  • MTP3S-E6-C正品现货在售

    类型 描述 选取全部项目 类别 电缆,电线 - 管理 电缆扎带 - 支座和附件 制造商 Panduit Corp 系列 MTP 零件状态 有源 类型 多开 安装类型 螺钉 - #6 大小/尺寸 4.25 长 x 0.50 宽 x 0.12 高(107.9mm x 12.7mm x 3.0mm) 配套使用产品/相关产品 M,I,S 束带 材料 尼龙 颜色 天然

    2019-10-30
  • MTMC8E02LBF

    MTMC8E02LBF,全新原装当天发货或门市自取0755-82732291,

    2019-4-9