TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.18 OHM

TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on)= 0.18 OHM TMOSV is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS

M-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.18Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter,

Power MOSFET 12 Amps, 60 Volts

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TMOS V N-Channel Enhancement-Mode Power Field Effect Transistor DPAK for Surface

功率 MOSFET，12A，60V

Power MOSFET 12 Amps, 60 Volts

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N-Channel 60 V (D-S) MOSFET

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Power MOSFET 12 Amps, 60 Volts

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N-Channel 60 V (D-S) MOSFET

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MULTIPLEXED TWO-WIRE HALL-EFFECT SENSOR ICs

MULTIPLEXED TWO-WIRE HALL-EFFECT SENSOR ICs The UGN3055U Hall-effect sensor is a digital magnetic sensing IC capable of communicating over a two-wire power/signal bus. Using a sequential addressing scheme, the device responds to a signal on the bus and returns the diagnostic status of the IC, as

Customer Specification

Construction 1) Component 1 1 X 1 HOOKUP a) Conductor 18 (16/30) AWG Tinned Copper 0.047 b) Insulation 0.016 Wall, Nom. PVC 0.079+/- 0.002 (1) Print ALPHA WIRE E163869-* RU AWM STYLES 1569 105C OR 1007 80C 300V VW-1 IEC 60332-1 18 AWG OR CRU TR-64 90C FT1 CE ROHS {0} * = Factory Code

WASHERS AND NUTS

[KEYSTONE] FIBRE SHOULDER WASHERS HEX MACHINE NUTS NYLON SHOULDER WASHER/BUSHINGS BLIND CAPTIVE NUTS - PRESS FIT METRIC MACHINE NUTS

N-Channel 30-V (D-S) MOSFET

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Customer Specification

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