型号 功能描述 生产厂家 企业 LOGO 操作
MTD2N50

POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE DPAK FOR SURFACE MOUNT OR INSERTION MOUNT

文件:168.7 Kbytes Page:5 Pages

Motorola

摩托罗拉

MTD2N50

Power MOSFET

文件:1.07618 Mbytes Page:9 Pages

VBSEMI

微碧半导体

TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 3.6 OHM

TheD2PAK package has the capability of housing a larger die thanany existing surface mount package which allows it to be used inapplications that require theuse of surface mount components withhigher power and lower RDS(on)capabilities. This high voltage MOSFETuses an advanced termination scheme

Motorola

摩托罗拉

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 2A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.6Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.15Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.15Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.18Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter,

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.18Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter,

ISC

无锡固电

N?묬hannel DPAK Power MOSFET

文件:152.07 Kbytes Page:12 Pages

ONSEMI

安森美半导体

Power MOSFET

文件:1.07619 Mbytes Page:9 Pages

VBSEMI

微碧半导体

TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 3.6 OHM

ETC

知名厂家

N−Channel DPAK Power MOSFET

ONSEMI

安森美半导体

N?묬hannel DPAK Power MOSFET

文件:152.07 Kbytes Page:12 Pages

ONSEMI

安森美半导体

N-Channel 650V (D-S)Power MOSFET

文件:1.0758 Mbytes Page:9 Pages

VBSEMI

微碧半导体

Power MOSFET

文件:1.07621 Mbytes Page:9 Pages

VBSEMI

微碧半导体

N?묬hannel DPAK Power MOSFET

文件:152.07 Kbytes Page:12 Pages

ONSEMI

安森美半导体

2 Amps, 500 Volts N-CHANNEL POWER MOSFET

文件:173.38 Kbytes Page:6 Pages

UTC

友顺

2A, 500V N-CHANNEL POWER MOSFET

文件:181.74 Kbytes Page:6 Pages

UTC

友顺

N-CHANNEL JUNCTIN SILICON FET

文件:208.82 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL JUNCTIN SILICON FET

文件:208.82 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL JUNCTIN SILICON FET

文件:208.82 Kbytes Page:7 Pages

UTC

友顺

MTD2N50产品属性

  • 类型

    描述

  • 型号

    MTD2N50

  • 制造商

    MOTOROLA

  • 制造商全称

    Motorola, Inc

  • 功能描述

    POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE DPAK FOR SURFACE MOUNT OR INSERTION MOUNT

更新时间:2025-12-25 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON/安森美
24+
NA/
160
优势代理渠道,原装正品,可全系列订货开增值税票
MOT
23+
NA
20000
全新原装假一赔十
ON/安森美
22+
TO-252
100000
代理渠道/只做原装/可含税
VBsemi/台湾微碧
22+
TO-252
20000
公司只做原装 品质保障
ON
NEW
TO-252
6893
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订
ON/安森美
23+
TO-252
15238
原厂授权一级代理,专业海外优势订货,价格优势、品种
MOT
25+23+
TO252
74362
绝对原装正品现货,全新深圳原装进口现货
ON
2025+
TO-252
3685
全新原厂原装产品、公司现货销售
MOTOROLA
22+
TO-252
3000
原装正品,支持实单
ON
25+
TO-252
4500
全新原装、诚信经营、公司现货销售!

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