位置：首页 > IC中文资料第9355页 > MTD2N50E
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
MTD2N50E | isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 2A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.6Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con | ISC 无锡固电 |   | |
MTD2N50E | TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 3.6 OHM TheD2PAK package has the capability of housing a larger die thanany existing surface mount package which allows it to be used inapplications that require theuse of surface mount components withhigher power and lower RDS(on)capabilities. This high voltage MOSFETuses an advanced termination scheme | Motorola 摩托罗拉 | | |
MTD2N50E | N?묬hannel DPAK Power MOSFET 文件：152.07 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | |
MTD2N50E | Power MOSFET 文件：1.07619 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | |
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.15Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.15Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.18Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.18Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, | ISC 无锡固电 | | ||
N?묬hannel DPAK Power MOSFET 文件：152.07 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | ||
N-Channel 650V (D-S)Power MOSFET 文件：1.0758 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
Power MOSFET 文件：1.07621 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
N?묬hannel DPAK Power MOSFET 文件：152.07 Kbytes Page：12 Pages | ONSEMI 安森美半导体 | | ||
2A, 500V N-CHANNEL POWER MOSFET 文件：181.74 Kbytes Page：6 Pages | UTC 友顺 | | ||
2 Amps, 500 Volts N-CHANNEL POWER MOSFET 文件：173.38 Kbytes Page：6 Pages | UTC 友顺 | | ||
N-CHANNEL JUNCTIN SILICON FET 文件：208.82 Kbytes Page：7 Pages | UTC 友顺 | | ||
N-CHANNEL JUNCTIN SILICON FET 文件：208.82 Kbytes Page：7 Pages | UTC 友顺 | | ||
N-CHANNEL JUNCTIN SILICON FET 文件：208.82 Kbytes Page：7 Pages | UTC 友顺 | |
MTD2N50E产品属性
- 类型
描述
- 型号
MTD2N50E
- 制造商
MOTOROLA
- 制造商全称
Motorola, Inc
- 功能描述
TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 3.6 OHM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
2022+ |
30000 |
进口原装现货供应,原装 假一罚十 |
||||
ON/安森美 |
24+ |
TO-252 |
505348 |
免费送样原盒原包现货一手渠道联系 |
|||
ON/安森美 |
23+ |
TO-252 |
15238 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
mot |
24+ |
N/A |
6980 |
原装现货,可开13%税票 |
|||
MOT |
25+23+ |
TO252 |
74362 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
MOTOROLA |
22+ |
TO-252 |
3000 |
原装正品,支持实单 |
|||
ON |
23+ |
TO-252 |
6893 |
||||
ON |
25+ |
TO-252 |
4500 |
全新原装、诚信经营、公司现货销售! |
|||
ON/安森美 |
24+ |
5000 |
只做原厂渠道 可追溯货源 |
||||
ON |
24+ |
35200 |
一级代理/放心采购 |
MTD2N50E规格书下载地址
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