TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.3 OHM

TMOS E-FET ™ Power Field Effect Transistor DPAK for Surface Mount P–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

Power Field Effect

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TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.3 OHM

Power Field Effect

Power Field Effect

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P-Channel 60-V (D-S) MOSFET

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POWER TRANSISTORS(15A)

2N3055A(NPN) MJ15015(NPN) MJ2955A(PNP) NJ15016(PNP)

POWER TRANSISTORS(10A,60V,75W)

COMPLEMENTARY SILICON POWER TRANSISTORS.

8-Bit Micro-controller

8-Bit Micro-controller with 16KB flash embedded

POWER TRANSISTORS(15A,60V,90W)

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS 90 WATTS designed for use int general-purpose amplifier and switching application NPN -> TIP3055 PNP -> TIP2955

POWER TRANSISTORS(15A,50V,115W)

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