TMOSPOWERFETLOGICLEVEL15AMPERES60VOLTSRDS(on)=175MOHM

HDTMOSE-FET™PowerFieldEffectTransistor DPAKforSurfaceMount N-ChannelEnhancement-ModeSiliconGate Thisadvancedhigh–celldensityHDTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–so

P?묬hannelDPAKPowerMOSFET

文件：91.91 Kbytes Page：8 Pages

P?묬hannelDPAKPowerMOSFET

文件：91.91 Kbytes Page：8 Pages

P?묬hannelDPAKPowerMOSFET

文件：91.91 Kbytes Page：8 Pages

P-Channel60-V(D-S)MOSFET

文件：988.36 Kbytes Page：8 Pages

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -60V,-14A,RDS(ON)=125mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RDS(ON)=175mW@VGS=-4.5V. Leadfreeproductisacquired.

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-60V,-15A,RDS(ON)=105mΩ@VGS=-10V. RDS(ON)=150mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-60V,-13A,RDS(ON)=105mΩ@VGS=-10V. RDS(ON)=150mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

P-Channel60-V(D-S)MOSFET

文件：988.36 Kbytes Page：8 Pages

P-ChannelEnhancementModeFieldEffectTransistor

文件：441.65 Kbytes Page：4 Pages